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2N7002KW

Description
310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size189KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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2N7002KW Overview

310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

2N7002KW Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage60 V
Processing package descriptionROHS COMPLIANT, ULTRA SMALL PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current0.3100 A
feedback capacitor5 pF
Maximum drain on-resistance1.6 ohm
UNISONIC TECHNOLOGIES CO., LTD
2N7002KW
300mA, 60V N-CHANNEL
ENHANCEMENT MODE
MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N7002KW
uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* Low Reverse Transfer Capacitance (C
RSS
= typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Package
SOT-323
S: Source
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
Note:
2N7002KWG-AL3-R
Pin Assignment: G: Gate D: Drain
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R209-033.A

2N7002KW Related Products

2N7002KW 2N7002KWG-AL3-R
Description 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 3 3
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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