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30N06L-TN3-T

Description
N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size346KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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30N06L-TN3-T Overview

N-CHANNEL POWER MOSFET

30N06L-TN3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)300 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)46 W
Maximum pulsed drain current (IDM)120 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
30N06
60V, 30A N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220F1
1
TO-220F2
1
TO-220
Power MOSFET
1
TO-220F
The UTC
30N06
is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
FEATURES
1
TO-251
1
TO- 252
* R
DS(ON)
= 40mΩ@V
GS
= 10 V, I
D
=15A
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF1-T
30N06G-TF1-T
TO-220F1
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TM3-T
30N06G-TM3-T
TO-251
30N06L-TN3-T
30N06G-TN3-T
TO-252
30N06L-TN3-R
30N06G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-087.H

30N06L-TN3-T Related Products

30N06L-TN3-T 30N06G-TF3-T 30N06G-TM3-T 30N06G-TN3-R 30N06G-TN3-T 30N06L-TF1-T 30N06L-TF2-T 30N06L-TM3-T 30N06L-TN3-R 30N06_15
Description N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to incompatible conform to conform to conform to conform to conform to conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 -
Reach Compliance Code compli compli compli compli compli compli compli compli compli -
Avalanche Energy Efficiency Rating (Eas) 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V -
Maximum drain current (Abs) (ID) 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A -
Maximum drain current (ID) 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A -
Maximum drain-source on-resistance 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-252 TO-220AB TO-251 TO-252 TO-252 TO-220AB TO-220AB TO-251 TO-252 -
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 R-PSFM-T3 R-PSIP-T3 R-PSSO-G2 -
Number of components 1 1 1 1 1 1 1 1 1 -
Number of terminals 2 3 3 2 2 3 3 3 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE FLANGE MOUNT IN-LINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT IN-LINE SMALL OUTLINE -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 46 W 45 W 46 W 46 W 46 W 45 W 45 W 46 W 46 W -
Maximum pulsed drain current (IDM) 120 A 120 A 120 A 120 A 120 A 120 A 120 A 120 A 120 A -
surface mount YES NO NO YES YES NO NO NO YES -
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING -
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
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