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3N90G-TN3-R

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size249KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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3N90G-TN3-R Overview

Power Field-Effect Transistor

UNISONIC TECHNOLOGIES CO., LTD
3N90-E
3A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
3N90-E
provides excellent R
DS(ON)
, low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES
* R
DS(ON)
< 6.2Ω @ V
GS
=10V, I
D
=1.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
RDERING INFORMATION
Package
TO-251
TO-251S2
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
3N90L-TM3-T
3N90G-TM3-T
3N90L-TMS2-T
3N90G-TMS2-T
3N90L-TN3-R
3N90G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-007.C

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3N90G-TN3-R 3N90-E 3N90G-TM3-T 3N90G-TMS2-T 3N90L-TM3-T 3N90L-TMS2-T 3N90L-TN3-R
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