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4N60KG-TA3-T

Description
N-CHANNEL JUNCTIN SILICON FET
File Size242KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet View All

4N60KG-TA3-T Overview

N-CHANNEL JUNCTIN SILICON FET

UNISONIC TECHNOLOGIES CO., LTD
4N60K-MT
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Preliminary
Power MOSFET
The UTC
4N60K-MT
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 2.5Ω @ V
GS
= 10 V, I
D
= 2.2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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