UNISONIC TECHNOLOGIES CO., LTD
BSS84ZT
0.13A, 50V P-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
DESCRIPTION
Power MOSFET
These P-Channel enhancement mode field vertical D-MOS
transistors are in a SOT-523 SMD package, and in most applications
they require up to 0.13A DC and can deliver current up to 0.52A.
This product is particularly suited to low voltage applications
requiring a low current high side switch.
FEATURES
* R
DS(ON)
< 10Ω @ V
GS
=-4.5V, I
D
=-0.1A
SYMBOL
ORDERING INFORMATION
Ordering Number
BSS84ZTG-AN3-R
Pin Assignment: S: Source G: Gate
Package
SOT-523
D: Drain
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
Note:
MARKING
S84G
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ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Power MOSFET
RATINGS
UNIT
-50
V
±20
V
DC
-0.13
Continuous Drain Current
I
D
A
Pulse
-0.52
Power Dissipation
P
D
0.15
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
RATINGS
625
UNIT
°C/W
PARAMETER
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
MIN
-50
-15
±10
-0.8
-0.6
0.05
-1.7
1.2
0.6
73
10
5
0.9
0.2
0.3
2.5
6.3
10
4.8
-0.8
1.3
-2
10
TYP MAX UNIT
V
µA
µA
V
Ω
A
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=-250µA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-50V, V
GS
=0V
Gate–Body Leakage, Forward
I
GSS
V
DS
=0V, V
GS
=±20V
ON CHARACTERISTICS
(Note)
Gate-Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-1m A
Static Drain–Source On–Resistance
R
DS(ON)
V
GS
=-4.5V, I
D
=-0.1A
On-State Drain Current
I
D(ON)
V
GS
=-10 V, V
DS
=-5V
Forward Transconductance
g
FS
V
DS
=-25V, I
D
=-0.1A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=-25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note)
Total Gate Charge
Q
G
V
DS
=-30V, V
GS
=-10V,
Gate Source Charge
Q
GS
I
D
=-0.1A
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=-30V, I
D
=-0.1A,V
GS
=-10V,
R
G
=6Ω,
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
=-0.13A (Note)
Max. Diode Forward Current
I
S
Pulsed Drain-Source Current
I
Sm
Note: Pulse test, pulse width
≤
300us, duty cycle≤ 2%
5
13
20
9.6
-1.2
-0.13
-0.52
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www.unisonic.com.tw
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BSS84ZT
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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