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BFR843EL3

Description
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size1MB,27 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BFR843EL3 Overview

Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

BFR843EL3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionHALOGEN FREE AND ROHS COMPLIANT, LEADLESS, PLASTIC, TSLP-3-10, 3 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionEMITTER
Maximum collector current (IC)0.055 A
Collector-emitter maximum voltage2.25 V
ConfigurationSINGLE
highest frequency bandX BAND
JESD-30 codeR-PBCC-N3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BFR843EL3
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
Data Sheet
Revision 1.0, 2014-08-05
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