Data Sheet
HiRel
RadHard Power-MOS
Low R
DS(on)
BUY25CS45B-01
Single Event Effect (SEE) hardened
LET 85, Range: 118µm
LET 55, Range: 90µm
V
GS
= -10V, V
DS
= 250V
V
GS
= -15V, V
DS
= 250V
V
GS
= -15V, V
DS
= 120V
V
GS
= -20V, V
DS
= 160V
Total Ionisation Dose (TID) hardened
100 kRad approved
Hermetically sealed
N-channel
Marking
-
Pin Configuration
1
2
3
D
S
G
1
2
3
4
Type
BUY25CS45B-01
Maximum Ratings
Parameter
Drain Source Voltage
Gate Source Voltage
Drain Gate Voltage
Package
4
Not connected
TO-254AA
Symbol
V
DS
V
GS
V
DG
I
D
Values
250
+/- 20
250
45
29
Unit
V
V
V
A
Continuous Drain Current
T
C
= 25 °C
T
C
= 100 °C
Continuous Source Current
Drain Current Pulsed, t
p
limited by T
jmax
Total Power Dissipation
1)
Junction Temperature
Operating and Storage Temperature
Avalanche Energy
Thermal Characteristics
Thermal Resistance (Junction to Case)
Soldering Temperature
Notes.:
1)
For T
S
≤ 25°C. For T
S
> 25°C derating is required
.
I
S
I
DM
P
tot
T
J
T
op
E
AS
45
180
208
-55 to + 150
-55 to + 150
380
A
Apk
W
°C
°C
mJ
R
th JC
0.6
250
K/W
°C
T
sol
IFAG PMM RFS D HIR
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Preliminary Mar 2015
Data Sheet
Parameter
BUY25CS45B-01
Values
min.
max.
Unit
Electrical Characteristics,
at T
A
=25°C; unless otherwise specified
Symbol
DC Characteristics
Breakdown Voltage Drain to Source
I
D
= 0.25mA, V
GS
= 0V
Gate Threshold Voltage
I
D
= 1.0mA, V
DS
≥ V
GS
Gate to Source Leakage Current
V
DS
= 0V, V
GS
= +/- 20V
Drain Current
V
DS
= 200V, V
GS
= 0V
Drain Source On Resistance
1)
V
GS
= 10V, I
D
= 29A
B
VDSS
V
GS(th)
I
GSS
I
DSS
r
DS(ON)
250
2.0
-
-
-
-
-
4.0
V
V
+/-100 nA
25
0.05
1.4
µA
Ω
V
Source Drain Diode, Forward Voltage
1), 2)
V
SD
V
GS
= 0V, I
S
= 45A
AC Characteristics
Turn-on Delay Time
V
DD
= 50% V
DS
, I
D
= 29A, R
G
= 4.7Ω
Rise Time
V
DD
= 50% V
DS
, I
D
= 29A, R
G
= 4.7Ω
Turn-off Delay Time
V
DD
= 50% V
DS
, I
D
= 29A, R
G
= 4.7Ω
Fall Time
V
DD
= 50% V
DS
, I
D
= 29A, R
G
= 4.7Ω
Reverse Recovery Time
V
DD
< 50% V
DS
, I
D
= 45A
Common Source Input Capacitance
V
DS
= 100V, V
GS
= 0V, f = 1.0MHz
Common Source Output Capacitance
V
DS
= 100V, V
GS
= 0V, f = 1.0MHz
Common Source
Reverse Transfer Capacitance
V
DS
= 100V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
V
DD
= 50% V
DS
, V
GS
= 10V, I
D
= 45A
Notes.:
1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%.
2) Measured within 2.0 mm of case.
t
d(ON)
t
r
t
d(OFF)
t
f
t
rr
C
iss
C
oss
C
rss
-
-
-
-
-
3.5
250
5
50
95
80
75
600
6.5
400
20
ns
ns
ns
ns
ns
nF
pF
pF
Q
G
-
100
nC
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Preliminary Mar 2015
Data Sheet
Electrical Characteristics
at T
A
=125°C; unless otherwise specified
Parameter
BUY25CS45B-01
Symbol
min.
Values
max.
Unit
DC Characteristics
Gate Threshold Voltage
I
D
= 1.0mA, V
DS
≥ V
GS
Gate to Source Leakage Current
V
DS
= 0V, V
GS
= +/- 20V
Drain Current
V
DS
= 200V, V
GS
= 0V
Drain Source On Resistance
1)
V
GS
= 10V, I
D
= 29A
Notes.:
1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%.
V
GS(th)
I
GSS
I
DSS
r
DS(ON)
1.5
-
-
-
-
V
+/-200 nA
250
0.09
µA
Ω
Electrical Characteristics
at T
A
=-55°C; unless otherwise specified
Parameter
Symbol
min.
DC Characteristics
Gate Threshold Voltage
I
D
= 1.0mA, V
DS
≥ V
GS
V
GS(th)
-
5.0
V
Values
max.
Unit
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Preliminary Mar 2015
Data Sheet
1 Safe operating area
I
D
= f(V
DS
); T
C
= 25°C
parameter: t
p
BUY25CS45B-01
2 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter: D = t
p
/T
IFAG PMM RFS D HIR
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Preliminary Mar 2015
Data Sheet
3 Typ. output characteristics
I
D
= f(V
DS
); T
j
= 25 °C
parameter: V
GS
BUY25CS45B-01
4 Typ. output characteristics
I
D
= f(V
DS
); T
j
= 150 °C
parameter: V
G
5 Typ. drain-source on-state
resistance
R
DS(on)
= f(I
D
); T
j
= 150 °C
parameter: V
GS
6 Typ. drain-source on-state
resistance
R
DS(on)
= f(T
j
)
I
D
=29A
IFAG PMM RFS D HIR
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Preliminary Mar 2015
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