JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220 package
・High
breakdown voltage
APPLICATIONS
・For
TV chroma,video ,audio
output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC1755
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
15
150
-40~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
300
300
7
0.2
0.7
1.2
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=1mA ;I
B
=0
I
C
=50mA ;I
B
=5mA
V
CB
=200V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=10mA ; V
CE
=10V
I
C
=10mA ; V
CE
=30V
f=1MHz;V
CB
=50V
40
50
MIN
300
2SC1755
TYP.
MAX
UNIT
V
2.0
0.1
0.1
200
V
μA
μA
MHz
5.3
pF
h
FE
classifications
C
40-80
D
60-120
E
100-200
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1755
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1755
4
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