UNISONIC TECHNOLOGIES CO., LTD
12N65
12A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
12N65
are N-Channel enhancement mode power field
effect transistors (MOSFET) which are produced by using UTC’s
proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance and withstand high energy pulse in the avalanche and
commutation mode, the advanced technology has been especially
tailored.
Power MOSFET
FEATURES
* R
DS(ON)
< 0.85Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
12N65L-TA3-T
12N65G-TA3-T
TO-220
12N65L-TF1-T
12N65G-TF1-T
TO-220F1
12N65L-TF2-T
12N65G-TF2-T
TO-220F2
12N65L-TF3-T
12N65G-TF3-T
TO-220F
12N65L-T2Q-T
12N65G-T2Q-T
TO-262
12N65L-T3P-T
12N65G-T3P-T
TO-3P
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-583.C
12N65
MARKING
Power MOSFET
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QW-R502-583.C
12N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
12
A
12
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
48
A
790
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220 / TO-262
225
W
TO-220F / TO-220F1
51
W
Power Dissipation
P
D
TO-220F2
54
W
TO-3P
260
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, I
AS
= 12A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
12A, di/dt
≤200A/s,
V
DD
≤BV
DSS
Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-262
TO-3P
TO-220 / TO-262
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-3P
SYMBOL
θ
JA
RATING
62.5
40
0.56
2.43
2.31
0.48
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
θ
JC
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QW-R502-583.C
12N65
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0 V, I
D
= 250 µA
650
V
Drain-Source Leakage Current
I
DSS
V
DS
= 650 V, V
GS
= 0 V
1
µA
Gate-Source Leakage Current
I
GSS
V
GS
= ±30 V, V
DS
= 0 V
±100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250µA,Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 6.0A
0.65 0.85
Ω
DYNAMIC CHARACTERISTICS
1480 1900 pF
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
C
OSS
200 270 pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
25
35
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
30
70
ns
Turn-On Rise Time
t
R
115 240
ns
V
DD
= 325V, I
D
= 12A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
95 200
ns
Turn-Off Fall Time
t
F
85 180
ns
42
54
nC
Total Gate Charge
Q
G
V
DS
= 520V,I
D
= 12A,
Gate-Source Charge
Q
GS
8.6
nC
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
21
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 12A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
12
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
48
A
Forward Current
Reverse Recovery Time
t
RR
380
ns
V
GS
= 0 V, I
S
= 12A,
dI
F
/dt = 100 A/µs (Note 1)
Reverse Recovery Charge
Q
RR
3.5
µC
Notes: 1. Pulse Test : Pulse width
≤300μs,
Duty cycle
≤
2%
2. Essentially independent of operating temperature
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QW-R502-583.C
12N65
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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