MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Small-Signal-Transistor,100V
BSL296SN
DataSheet
Rev.2.0
Final
Industrial&Multimarket
BSL296SN
OptiMOS Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
™
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
100
460
560
1.4
A
V
mΩ
• Avalanche rated
• Qualified according to AEC Q101
• RoHS compliant
• Halogen-free according to IEC61249-2-21
1
2
3
PG-TSOP6
6
5
4
Type
BSL296SN
Package
TSOP6
Tape and Reel Info
H6327: 3000 pcs/ reel
Marking
sLZ
Halogen Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
dv /dt
T
A
=25 °C
I
D
=1.4 A,
R
GS
=25
Ω
I
D
=1.4 A,
V
DS
=50 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
1.4
1.1
5.6
15.0
6
±20
T
A
=25 °C
2.0
-55 ... 150
JESD22-A114 -HBM
0 (<250V)
260 °C
55/150/56
mJ
kV/µs
V
W
°C
Unit
A
V
GS
P
tot
T
j
,
T
stg
Rev 2.0
page 1
2014-10-16
BSL296SN
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance
junction - ambient
Values
typ.
max.
Unit
R
thJS
R
thJA
minimal footprint
6 cm
2
cooling area
1)
-
-
-
-
-
-
50
230
62.5
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
GS(th)
I
DSS
V
DS
=Vgs V,
I
D
=100 µA
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=100 V,
V
GS
=0 V,
100
0
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=1.4 A
V
GS
=10 V,
I
D
=1.26 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=1.1 A
100
0.8
-
-
1.4
-
-
1.8
0.02
μA
V
-
-
-
-
-
-
357
314
3.04
10
10
560
460
-
S
nA
mΩ
1)
Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70μm thick) copper area for drain
connection. PCB is vertical in still air. (t < 5 sec.)
Rev 2.0
page 2
2014-10-16
BSL296SN
Parameter
Symbol Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate p
plateau voltage
g
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
2)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=10 V,
I
D
=1.4 A,
R
G,ext
=6
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
114.8
19.7
9.8
3.5
3.0
17.1
4.5
152.7
26.3
14.7
5.6
4.5
25.65
8.1
pF
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=50 V,
I
D
=1.4 A,
V
GS
=0 to 5 V
-
-
-
-
0.27
1.47
2.7
2.5
0.4
2.2
4.0
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
A
=25 °C
V
GS
=0 V,
I
F
=1.4 A,
T
j
=25 °C
V
R
=50 V,
I
F
=1.4 A,
di
F
/dt =200 A/µs
-
-
-
-
-
-
-
0.8
20
37
1.4
5.6
1.1
30
55
A
V
ns
nC
Defined by design. Not subjected to production test
Rev 2.0
page 3
2014-10-16
BSL296SN
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10
V
2.5
1.6
1.4
2
1.2
1.5
1
P
tot
[W]
I
D
[A]
1
0.5
0
0
40
80
120
160
0.8
0.6
0.4
0.2
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1 µs
10 µs
100 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
2
0.5
1
1 ms
10 ms
0.2
Z
thJA
[K/W]
0.1
0.1
10
1
0.05
I
D
[A]
5s
0.02
0.01
0.01
single pulse
0.001
1
10
0
V
DS
[V]
10
100
1000
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
p
[s]
Rev 2.0
page 4
2014-10-16
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