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12N60G-TF1-T

Description
12 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
CategoryDiscrete semiconductor    The transistor   
File Size400KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

12N60G-TF1-T Overview

12 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

12N60G-TF1-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)790 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)12 A
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)51 W
Maximum pulsed drain current (IDM)48 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
12N60
12A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
12N60
are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using
UTC’s proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
* R
DS(ON)
< 0.8Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Ordering Number
Package
Lead Free
Halogen Free
12N60L-TA3-T
12N60G-TA3-T
TO-220
12N60L-TF1-T
12N60G-TF1-T
TO-220F1
12N60L-TF2-T
12N60G-TF2-T
TO-220F2
12N60L-TF3-T
12N60G-TF3-T
TO-220F
12N60L-T2Q-T
12N60G-T2Q-T
TO-262
12N60L-T3P-T
12N60G-T3P-T
TO-3P
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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