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12N80G-T47-T

Description
N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size239KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

12N80G-T47-T Overview

N-CHANNEL POWER MOSFET

12N80G-T47-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)360 W
surface mountNO
Maximum time at peak reflow temperatureNOT SPECIFIED
UNISONIC TECHNOLOGIES CO., LTD
12N80
12A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
12N80
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC
12N80
is universally applied in high efficiency switch
mode power supply.
Power MOSFET
FEATURES
* R
DS(on)
< 1.0
@ V
GS
=10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N80L-T47-T
12N80G-T47-T
12N80L-T3P-T
12N80G-T3P-T
12N80L-TC3-T
12N80G-TC3-T
12N80L-TF2-T
12N80G-TF2-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-247
TO-3P
TO-230
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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