UNISONIC TECHNOLOGIES CO., LTD
7N90
7A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
7N90
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
7N90
is universally applied in active power factor
correction, electronic lamp ballast based on half bridge topology and
high efficient switched mode power supply.
FEATURES
* High switching speed
* R
DS(ON)
<1.8Ω @ V
GS
=10V, I
D
=3.5A
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
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QW-R502-475.H
7N90
ORDERING INFORMATION
Preliminary
Power MOSFET
Ordering Number
Lead Free
Halogen Free
7N90L-T3P-T
7N90G-T3P-T
7N90L-TF3-T
7N90G-TF3-T
7N90L-TF1-T
7N90G-TF1-T
7N90L-TF2-T
7N90G-TF2-T
7N90L-T2Q-T
7N90G-T2Q-T
7N90L-TQ2-T
7N90G-TQ2-T
7N90L-TQ2-R
7N90G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain S: Source
Package
TO-3P
TO-220F
TO-220F1
TO-220F2
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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Tube
Tube
Tape Reel
MARKING
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QW-R502-475.H
7N90
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
900
V
Gate to Source Voltage
V
GSS
±30
V
T
C
=25°C
7.0
A
I
D
Continuous Drain Current
T
C
=100°C
4.4
A
Pulsed Drain Current (Note 2)
I
DM
28
A
Avalanche Current (Note 2)
I
AR
6.4
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
500
mJ
Repetitive Avalanche Energy (Note 2)
E
AR
21
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-3P
240
TO-220F/TO-220F1
52
Power Dissipation
P
D
W
TO-220F2
TO-262/TO-263
180
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=20mH, I
AS
=7.0A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤7.0A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
40
62.5
0.52
θ
JC
2.4
0.69
°C/W
UNIT
°C/W
PARAMETER
TO-3P
TO-220F/TO-220F1
Junction to Ambient
TO-220F2/TO-262
TO-263
TO-3P
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-262/TO-263
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QW-R502-475.H
7N90
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
900
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
I
D
=250μA,Referenced to 25°C
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=720V, T
C
=125°C
Forward
I
GSS
V
DS
=0V ,V
GS
=30V
Gate-Source Leakage Current
Reverse
I
GSS
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3.5A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=3.5A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=1A,
R
G
=25Ω (Note 4,5)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=120V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=11A (Note 4,5)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=7.0A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=7.0A,
dI
F
/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
TYP
MAX UNIT
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
6.4
25.6
1.4
A
A
V
ns
μC
0.96
10
100
100
-100
5.0
1.8
1.5
5.7
1440 1880
140
185
17
23
90
100
260
140
160
15
35
400
4.3
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QW-R502-475.H
7N90
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-475.H
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