UNISONIC TECHNOLOGIES CO., LTD
5N40
5A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
5N40
is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
5N40
is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
1
TO-220
Power MOSFET
1
TO-220F1
1
TO-252
FEATURES
* R
DS(ON)
<1.2Ω @ V
GS
=10V
* High switching speed
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
5N40L-TA3-T
5N40G-TA3-T
TO-220
5N40L-TF1-T
5N40G-TF1-T
TO-220F1
TO-252
5N40L-TN3-R
5N40G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
5N40L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Free
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TN3: TO-252
(3) L: Lead Free, G: Halogen Free
MARKING
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QW-R502-571.C
5N40
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
I
D
5
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 2)
I
DM
20
A
Avalanche Current (Note 2)
I
AR
5
A
Single Pulsed (Note 3)
E
AS
300
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
7.3
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
69
W
Power Dissipation
TO-220F1
P
D
38
W
TO-252
54
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21.5mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F1
Junction to Ambien
TO-252
TO-220
Junction to Case
TO-220F1
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
1.8
3.25
2.13
UNIT
°C/W
°C/W
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2 of 6
QW-R502-571.C
5N40
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Coefficient
Drain-Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=320V, I
D
=5A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=200V, I
D
=5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=5A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=5A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
400
0.4
V
V/°C
1
µA
+100 nA
-100 nA
2.0
0.96
480
80
15
18
2.2
9.7
12
46
50
48
4.0
1.2
625
105
20
24
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
35
100
110
105
5
20
1.4
263
1.9
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5N40
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
D.U.T.
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-571.C
5N40
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
Power MOSFET
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-571.C
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