UNISONIC TECHNOLOGIES CO., LTD
2N7002W
Preliminary
Power MOSFET
300mA, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
2N7002W
uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low R
DS(ON)
.
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
SOT-323
S: Source
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
Note:
2N7002WG-AL3-R
Pin Assignment: G: Gate
D: Drain
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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2N7002W
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (R
GS
≤1MΩ)
Gate Source Voltage
Drain Current
Power Dissipation
Derated Above 25°C
Junction Temperature
Storage Temperature
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified.)
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
T
STG
RATINGS
60
60
20
40
300
800
200
1.6
+ 150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/°C
°C
°C
Continuous
Non Repetitive(t
P
<50μs)
Continuous
Pulsed
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
RATINGS
625 (Note1)
UNIT
°C/W
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(TH)
V
DS (ON)
R
DS (ON)
C
ISS
C
OSS
C
RSS
t
ON
TEST CONDITIONS
V
GS
=0V, I
D
=10μA
V
DS
=60V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
GS
= V
DS
, I
D
=250μA
V
GS
= 10V, I
D
=300mA
V
GS
= 5.0V, I
D
=50mA
V
GS
=10V, I
D
=300mA ,T
J
=125°C
V
GS
=5.0V, I
D
=50mA
V
DS
=25V,V
GS
=0V,f=1.0MHz
MIN
60
1
100
-100
1
2.1
0.6
0.09
2.5
3.75
1.5
13.5
7.5
50
25
5
20
20
0.88
1.5
0.8
300
TYP
MAX UNIT
V
A
nA
nA
V
V
Ω
Ω
pF
pF
pF
nS
nS
V
A
mA
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
(Note2)
Gate Threshold Voltage
Drain-Source On-Voltage
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
20
11
4
V
DD
=30V, R
L
=150Ω, I
D
=200mA,
V
GS
=10V, R
GEN
=25Ω
V
DD
=30V, R
L
=25Ω, I
D
=200mA,
Turn-Off Time
t
OFF
V
GS
=10V, R
GEN
=25Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, Is=300mA (Note )
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Maximum Continuous Drain-Source
Is
Diode Forward Current
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TEST CIRCUIT AND WAVEFORM
Preliminary
Power MOSFET
V
DD
R
L
V
IN
D
V
GS
R
GEN
G
S
DUT
V
OUT
Fig. 1
t
ON
t
D(ON)
t
R
90%
t
D(OFF)
t
OFF
t
F
90%
Output, V
OUT
10%
10%
Inverted
90%
Input, V
IN
10%
50%
Pulse Width
50%
Fig. 2 Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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