BAV99
Silicon Epitaxial Planar
Switching Diode
Fast switching in thick and thin-film circuits diode
Marking Code:
A7
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25℃)
PARAMETER
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current (Double Diode Loaded)
Continuous Forward Current (Single Diode Loaded)
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1
μs
Power Dissipation
Junction Temperature
Storage Temperature Range
P
tot
T
j
T
stg
I
FSM
SYMBOL
V
RRM
V
R
I
F
I
F
I
FRM
VALUE
85
75
125
215
450
0.5
1
4.5
350
150
- 65 to + 150
UNIT
V
V
mA
mA
mA
A
mW
℃
℃
Characteristics at T
a
= 25℃
PARAMETER
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50mA
at I
F
= 150 mA
Reverse Current
at V
R
= 25 V
at V
R
= 75 V
at V
R
= 25 V, T
J
= 150℃
at V
R
= 75 V, T
J
= 150℃
Diode Capacitance
at V
R
= 0, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
R
= 1mA, R
L
= 100
Ω
SYMBOL
MAX.
0.715
0.855
1
1.25
30
1
30
50
1.5
4
UNIT
V
F
V
I
R
nA
µA
µA
µA
pF
ns
C
d
t
rr
Website: www.kingtronics.com
Email: info@kingtronics.com
Tel: (852) 8106 7033
Fax: (852) 8106 7099
1
BAV99
Silicon Epitaxial Planar
Switching Diode
RATINGS AND CHARACTERISTIC CURVES BAV99
Note: Specifications are subject to change without notice.
Website: www.kingtronics.com
Email: info@kingtronics.com
Tel: (852) 8106 7033
Fax: (852) 8106 7099
2
京公网安备 11010802033920号
EEWORLD
