BC807 datasheet, PDF - EEWORLD Datasheet

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BC807: Description800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size293KB，2 Pages; ManufacturerKingtronics; Websitehttp://www.kingtronics.com

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BC807 Overview

800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC807 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.8000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	SOT-23, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.3100 W
Transistor type	Universal small signal
Minimum DC amplification factor	60
Rated crossover frequency	100 MHz

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BC807

PNP Silicon Epitaxial Planar

Transistors

For switching, AF driver and amplifier applications

These transistors are subdivided into three groups

-16, -25 and -40, according to their current gain.

As complementary types the NPN transistors BC817

and BC818 are recommended.

1.Base 2.Emitter

3.Collector

SOT-23 Plastic Package

Absolute Maximum Ratings (T

= 25℃)

PARAMETER

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Power Dissipation

Thermal Resistance Junction to Ambient Air

Junction Temperature

Storage Temperature Range

SYMBOL

-V

CBO

-V

CEO

-V

EBO

-I

tot

ØJA

VALUE

500

200

500

150

- 55 to + 150

UNIT

K/W

℃

Electrical Characteristics at T

= 25℃

PARAMETER

DC Current Gain

at -V

= 1 V, - I

= 100 mA

Current Gain Group

-16

-25

-40

SYMBOL

MIN.

100

160

250

TYP.

MAX.

250

400

600

100

0.7

1.2

UNIT

at -V

= 1 V, - I

= 500 mA

Collector Base Cutoff Current

at -V

= 20 V

Emitter-Base Cutoff Current

at -V

= 5 V

Collector Saturation Voltage

at -I

= 500 mA, -I

= 50 mA

Base-Emitter Voltage

at -I

= 500 mA, -V

= 1 V

Gain-Bandwidth Product

at -V

= 5 V, - I

= 10 mA, f = 50 MHz

Collector-Base Capacitance

at -V

= 10 V, f = 1 MHz

-I

CBO

-I

EBO

-V

CEsat

-V

BE(on)

CBO

MHz

Website: www.kingtronics.com

Email: info@kingtronics.com

Tel: (852) 8106 7033

Fax: (852) 8106 7099

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