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BC846

Description
100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size504KB,2 Pages
ManufacturerKingtronics
Websitehttp://www.kingtronics.com
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BC846 Overview

100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

BC846 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage65 V
Processing package descriptionPLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.2500 W
Transistor typeUniversal small signal
Minimum DC amplification factor110
Rated crossover frequency100 MHz
BC846~BC850
NPN Silicon Epitaxial
Transistors
For switching and amplifier applications
As complementary types the PNP transistors
BC856~BC860 is recommended.
1.Base 2.Emitter
3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25℃)
PARAMETER
Collector Base Voltage
BC846
BC847, BC850
BC848, BC849
Collector Emitter Voltage
BC846
BC847, BC850
BC848, BC849
Emitter Base Voltage
BC846, BC847
BC848, BC849, BC850
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
amb
= 25℃
PARAMETER
DC Current Gain
at V
CE
= 5 V, I
C
= 2 mA
A
B
C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
J
T
S
VALUE
80
50
30
65
45
30
6
5
100
200
200
150
- 65 to + 150
UNIT
V
V
V
mA
mA
mW
SYMBOL
h
FE
MIN.
110
200
420
-
TYP.
-
MAX.
220
450
800
250
600
700
720
15
-
6
-
10
4
4
3
UNIT
-
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
Base Emitter On Voltage
at I
C
= 2 mA, V
CE
= 5 V
at I
C
= 10 mA, V
CE
= 5 V
Collector Cutoff Current
at V
CB
= 30 V
Current Gain Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Output Capacitance
at V
CB
= 10 V, f = 1 MHz
Input Capacitance
at V
EB
= 0.5 V, f = 1 MHz
Noise Figure
at I
C
= 200 µA, V
CE
= 5 V,
BC846, BC847, BC848
R
G
= 2 KΩ, f = 1 KHz
BC849, BC850
at I
C
= 200 µA, V
CE
= 5 V,
BC849
R
G
= 2 KΩ, f = 30~15 KHz BC850
V
CEsat
-
mV
V
BE(on)
I
CBO
580
-
-
-
-
-
-
-
300
-
9
mV
nA
MHz
pF
pF
f
T
C
ob
C
ib
NF
-
-
dB
Website: www.kingtronics.com
Email: info@kingtronics.com
Tel: (852) 8106 7033
Fax: (852) 8106 7099
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