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IPLU300N04S4-1R1

Description
N-channel - Enhancement mode
Categorysemiconductor    Discrete semiconductor   
File Size280KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPLU300N04S4-1R1 Overview

N-channel - Enhancement mode

IPLU300N04S4-1R1
OptiMOS™-T2 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
40
1.15
300
H-PSOF-8-1
Tab
8
1
Tab
V
mW
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant); 100% lead free
• Ultra low Rds(on)
• 100% Avalanche tested
1
8
Type
IPLU300N04S4-1R1
Package
H-PSOF-8-1
Marking
4N041R1
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=150 A
-
-
T
C
=25 °C
-
Value
300
277
1200
300
300
±20
300
-55 ... +175
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2014-11-21

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