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BUK9226-75A_15

Description
N-channel TrenchMOS logic level FET
File Size197KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK9226-75A_15 Overview

N-channel TrenchMOS logic level FET

DP
AK
BUK9226-75A
N-channel TrenchMOS logic level FET
Rev. 02 — 27 January 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
R
DSon
Quick reference data
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13;
see
Figure 12
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 49 A; V
sup
75 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
120
mJ
Min
-
-
-
-
-
-
Typ
-
-
-
-
Max Unit
75
45
114
29
V
A
W
mΩ
mΩ
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Symbol Parameter
Static characteristics
20.9 24.6 mΩ
22.1 26
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