UNISONIC TECHNOLOGIES CO., LTD.
DTA143T
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
FEATURES
PNP SILICON TRANSISTOR
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Reel
DTA143TG-AE3-R
DTA143TG-AL3-R
DTA143TG-AN3-R
Note: Pin Assignment: E: Emitter B: Base C: Collector
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1of 3
QW-R206-058.F
DTA143T
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C , unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
SOT-23/SOT-323
200
mW
Collector Power Dissipation
P
C
SOT-523
150
mW
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-40~+150
C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified.)
TEST CONDITIONS
I
C
=-50μA
I
C
=-1mA
I
E
=-50μA
V
CB
=-50V
V
EB
=-4V
I
C
=-5mA, I
B
= -0.25mA
V
CE
=-5V, I
C
= -1mA
V
CE
=-10V, I
E
=5mA, f=100MHz (Note)
MIN
-50
-50
-5
TYP
MAX UNIT
V
V
V
-0.5
μA
-0.5
μA
-0.3
V
600
6.11 kΩ
MHz
PARAMETER
SYMBOL
Collector-base breakdown voltage
BV
CBO
Collector-emitter breakdown voltage
BV
CEO
Emitter-base breakdown voltage
BV
EBO
Collector cutoff current
I
CBO
Emitter cutoff current
I
EBO
Collector-emitter saturation voltage
V
CE(SAT)
DC Current Gain
h
FE
Input resistance
R
1
Transition frequency
f
T
Note: Transition frequency of the device
100
3.29
250
4.7
250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-058.F
DTA143T
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
1000
500
200
100
50
20
10
5
2
1
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50
-100
PNP SILICON TRANSISTOR
V
CE
=-5V
-1000
-500
-200
Collector-Emitter Saturation Voltage vs.
Collector Current
Ic/I
B
=20
T
A
=100℃
25℃
-40℃
T
A
=100℃
25℃
-40℃
-100
-50
-20
-10
-5
-2
-1
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50
-100
Collector Current, Ic (mA)
Collector Current, Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R206-058.F
京公网安备 11010802033920号
EEWORLD
