UNISONIC TECHNOLOGIES CO., LTD
2SB562
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
* Low frequency power amplifier
* Complement to 2SD468
1
TO-92
PNP EPITAXIAL SILICON TRANSISTOR
1
TO-92NL
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
2SB562L-x-T92-B
2SB562G-x-T92-B
2SB562L-x-T92-K
2SB562G-x-T92-K
2SB562L-x-T9N-B
2SB562G-x-T9N-B
2SB562L-x-T9N-K
2SB562G-x-T9N-K
Package
TO-92
TO-92
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Box
Bulk
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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2SB562
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
Ic
-1
A
Collector Peak Current
Ic(peak)
-1.5
A
Collector Power Dissipation
P
C
0.9
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
DC Current Transfer Ratio
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Collector Output Capacitance
Note 1: Pulse test
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITIONS
Ic=-10μA, I
E
=0
Ic=-1mA, R
BE
=∞
I
E
=-10μA, I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-2V, Ic=-0.5A (note)
Ic=-0.8A, I
B
=-0.08A (note)
V
CE
=-2V, Ic=-0.5A (note)
V
CE
=-2V, Ic=-0.5A (note)
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-25
-20
-5
85
-0.2
-0.8
350
38
TYP
MAX
UNIT
V
V
V
μA
V
V
MHz
pF
-1
240
-0.5
-1.0
CLASSIFICATION OF hFE
RANK
RANGE
B
85 - 170
C
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SB562
TYPICAL CHARACTERISTICS
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SB562
TYPICAL CHARACTERISTICS
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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