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2SD1071G-TA3-T

Description
HIGH VOLTAGE POWER AMPLIFIER
CategoryDiscrete semiconductor    The transistor   
File Size115KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2SD1071G-TA3-T Overview

HIGH VOLTAGE POWER AMPLIFIER

2SD1071G-TA3-T Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
Maximum collector current (IC)6 A
Collector-emitter maximum voltage300 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)500
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
2SD1071
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE POWER
AMPLIFIER
DESCRIPTION
The UTC
2SD1071
is a high voltage power amplifier, it uses UTC
advanced technology to provide the customers high DC current gain
and low saturation voltage, etc.
The UTC
2SD1071
is suitable for general purpose power amplifier
and Motor controls, etc.
FEATURES
* Low saturation voltage
* High DC current gain
EQUIVALENT CIRCUIT
Z-Di
C
B
Diode
RBE1 RBE2
E
ORDERING INFORMATION
Ordering Number
Lead Free
2SD1071L-TA3-T
Halogen Free
2SD1071G-TA3-T
Package
TO-220
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R203-043.b

2SD1071G-TA3-T Related Products

2SD1071G-TA3-T 2SD1071L-TA3-T 2SD1071_15
Description HIGH VOLTAGE POWER AMPLIFIER HIGH VOLTAGE POWER AMPLIFIER HIGH VOLTAGE POWER AMPLIFIER
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Reach Compliance Code compli compli -
Maximum collector current (IC) 6 A 6 A -
Collector-emitter maximum voltage 300 V 300 V -
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR -
Minimum DC current gain (hFE) 500 500 -
JEDEC-95 code TO-220AB TO-220AB -
JESD-30 code R-PSFM-T3 R-PSFM-T3 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type NPN NPN -
surface mount NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
Base Number Matches 1 1 -

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