UNISONIC TECHNOLOGIES CO., LTD
2N2955
SILICON PNP TRANSISTORS
DESCRIPTION
PNP SILICON TRANSISTOR
The UTC 2N2955 is a silicon PNP transistor in TO-3 metal
case. It is intended for power switching circuits, series and shunt
regulators, output stages and high fidelity amplifiers.
ORDERING INFORMATION
Ordering Number
Package
TO-3
C: Case
Pin Assignment
1
2
3
E
B
C
Packing
Tray
2N2955L-T30-Y
Note: Pin Assignment: E: Emitter
B: Base
MARKING
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QW-R205-004.D
2N2955
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
( T
A
=25C ,unless otherwise specified )
PARAMETERS
SYMBOL
RATINGS
UNITS
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
7
V
Collector-Emitter Voltage
V
CEV
70
V
Collector Current
I
C
15
A
Collector Peak Current (Note)
I
CM
15
A
Base Current
I
B
7
A
Base Peak Current (Note)
I
BM
15
A
Total Dissipation at T
A
=25C
P
D
115
W
Max. Operating Junction Temperature
T
J
+200
C
Storage Temperature
T
STG
-65 ~ 200
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
MIN
60
70
0.7
1.0
5.0
5.0
20
5
70
1.1
3.0
1.5
2.87
2.5
15
10
V
V
A
MHz
120
kHz
TYP
MAX
UNIT
V
V
mA
mA
mA
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
Collector-Emitter Sustaining
Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS
DC Current Gain (Note)
V
CEO(SUS)
I
C
=200mA, I
B
=0V
V
CER(SUS)
I
C
=0.2 A, R
BE
=100Ω
I
CEO
I
CEX
I
EBO
h
FE
V
CE
=30V,I
B
=0
V
CE
=100V, V
BE(OFF)
=1.5V
V
CE
=100V, V
BE(OFF)
=1.5V,
Ta=150C
V
BE
=7V, I
C
=0
I
C
=4A,V
CE
=4V,
I
C
=10A,V
CE
=4V
I
C
=4A, I
B
=400mA
I
C
=10A, I
B
=3.3A
I
C
=4A, V
CE
=4V
Collector-Emitter Saturation
V
CE(SAT)
Voltage
Base-Emitter On Voltage
V
BE(ON)
SECOND BREAKDOWN
Second Breakdown Collector with
Is/b
V
CE
=60V, T=1.0s, Non-repetitive
Base Forward Biased
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
I
C
=0.5A, V
CE
=10V, f=1MHz
Small-Signal Current Gain
h
FE
I
C
=1A, V
CE
=4V, f=1kHz
Small-Signal Current Gain
fh
FE
I
C
=1A, V
CE
=4V, f=1kHz
Cut-off Frequency
Note: Pulse Test: PW≦300s, Duty Cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-004.D
2N2955
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-004.D
Embedded System
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