UNISONIC TECHNOLOGIES CO., LTD
2SA1837
POWER AMPLIFIER
APPLICATIONS DRIVER
STAGE AMPLIFIER
APPLICATIONS
FEATURES
* High Transition Frequency: f
T
=70MH
Z
(Typ.)
* Complementary to UTC
2SC4793
PNP EPITAXIAL SILICON TRANSISTOR
ORDERING INFORMATION
Order Number
Lead Free
2SA1837L-TF3-T
2SA1837L-TF1-T
2SA1837L-TF2-T
Note: Pin Assignment: B: Base
Halogen-Free
2SA1837G-TF3-T
TO-220F
2SA1837G-TF1-T
TO-220F1
2SA1837G-TF2-T
TO-220F2
C: Collector
E: Emitter
Package
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
MARKING INFORMATION
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R219-002.D
2SA1837
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
-230
V
-230
V
-5
V
-1
A
-0.1
A
T
A
=25°C
2
Collector Power Dissipation
W
P
C
T
C
=25°C
20
Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-55 ~ 150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
BV
CEO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE (SAT)
f
T
Cob
TEST CONDITIONS
I
C
= -10mA, I
B
=0
V
CB
= -230V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -5V, I
C
= -100mA
I
C
= -500mA
,
I
B
= -50mA
V
CE
= -5V, I
C
= -500mA
V
CE
= -10V, I
C
= -100mA
V
CB
= -10V, I
C
=0, f=1MHz
MIN TYP MAX UNIT
-230
V
-1.0
μA
-1.0
μA
100
320
-1.5
V
-1.0
V
70
MHz
30
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1837
TYPICAL CHARACTERISTICS
Transition Frequency vs. Collector Current
500
Transition Frequency, f
T
(MHz)
PNP EPITAXIAL SILICON TRANSISTOR
Collector Current, I
C
(A)
300 COMMON EMITTER
V
CE
= -10V
T
C
=25°C
100
50
30
Collector Current vs. Base-Emitter Voltage
-1.0
COMMON
EMITTER
-0.8
V
CE
= -5V
-0.6
-0.4
-0.2
0
T
C
=100°C
25
-25
10
-30
-100
-5 -10
-300 -1000
Collector Current, I
C
(mA)
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base-Emitter Voltage, V
BE
(V)
Collector Current vs. Collector-Emitter Voltage
-1.0
-0.8
-0.6
-4
-0.4
I
B
= -2mA
-0.2
0
0
-10
-2
-8
-4
-6
Collector-Emitter Voltage, V
CE
(V)
COMMON EMITTER
T
C
=25°C
-20
-10
-8
-6
Collector-Emitter Saturation
Voltage, V
CE (sat)
(V)
Safe Operating Area
-5
-3 I
C
MAX. (PULSED)
1ms 10ms
I
C
MAX.
100ms
-1
(CONTINUOUS)
-0.5
-0.3 DC OPERATION
-0.1
-0.05
-0.03
-0.01
SINGLE NONREPETITIVE
PULSE T
C
=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
DC Current Gain, h
FE
-100 -300
-10 -30
-1
-3
Collector-Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R219-002.D
2SA1837
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PCB Design
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