UNISONIC TECHNOLOGIES CO., LTD
2SC3356
HIGH FREQUENCY LOW NOISE
AMPLIFIER
DESCRIPTION
The UTC
2SC3356
is designed for such applications as: DC/DC
converters, supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).
NPN SILICON TRANSISTOR
FEATURES
* Low Noise and High Gain
* High Power Gain
ORDERING INFORMATION
Ordering Number
Lead Free
2SC3356L-x-AE3-R
Package
SOT-23
Pin Description
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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2SC3356
ABSOLUTE MAXIMUM RATING
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
BV
CBO
20
V
Collector to Emitter Voltage
BV
CEO
12
V
Emitter to Base Voltage
BV
EBO
3
V
Collector Current
I
C
100
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-65~ +150
°С
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
a
=25°С, unless otherwise specified)
PARAMETER
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
RE
NF
TEST CONDITIONS
V
CB
=10V,I
E
=0
V
EB
=1 V, I
C
=0
V
CE
=10 V, I
C
=20 mA
V
CE
=10 V, I
C
=20 mA
V
CB
=10 V, I
E
=0, f =1.0MHz
V
CE
=10 V, I
C
=7mA, f =1.0GHz
MIN
TYP
MAX
1.0
1.0
300
1.0
2.0
UNIT
μA
μA
GHz
pF
dB
50
7
CLASSIFICATION OF h
FE
RANK
RANGE
A
50-160
B
160-240
C
240-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-024,E
2SC3356
Gain Bandwidth Product, f
T
(GHz)
DC Current Gain, h
FE
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Insertion Gain, |S
21
θ
|
2
(dB)
www.unisonic.com.tw
Maximum Gain, G
MAX
(dB)
Insertion Gain,|S
21θ
|
2
(dB)
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NPN SILICON TRANSISTOR
QW-R206-024,E
2SC3356
TYPICAL CHARACTERISTICS(Cont.)
7
6
Noise Figure, NF (dB)
5
4
3
2
1
0
0.5
Noise Figure vs. Collector Current
V
CE
=10V
f=1.0GHz
Noise Figue, NF (dB)
5
4
3
2
NPN SILICON TRANSISTOR
Noise Figure, Forward Insertion Gain
vs. Collector to Emitter Voltage
f=1.0GHz
I
C
=20mA
|S
21θ
|
2
NF
1
0
1
5
10
Collector Current, I
C
(mA)
50 70
0
2
4
6
8
10
Collector to Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-024,E
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