UNISONIC TECHNOLOGIES CO., LTD
2SC4774
HIGH FREQUENCY AMPLIFIER
TRANSISTOR, RF SWITCHING
(6V, 50mA)
FEATURES
NPN SILICON TRANSISTOR
* Very low output-on resistance (R
ON
).
* Low capacitance.
ORDERING INFORMATION
Order Number
Package
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
2SC4774G-AB3-R
SOT-323
Note: Pin Assignment: E: Emitter B: Base C: Collector
MARKING
C47G
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R220-017.C
2SC4774
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
12
V
Collector-Emitter Voltage
V
CEO
6
V
Emitter-Base Voltage
V
EBO
3
V
Collector Current
I
C
50
mA
Collector Power Dissipation
P
D
0.2
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
I
CBO
I
EBO
h
FE
f
T
C
ob
R
ON
TEST CONDITIONS
I
C
=10μA
I
C
=1mA
I
E
=10μA
I
C
/I
B
=10mA/1mA
V
CB
=10V
V
EB
=2V
V
CE
/I
C
=5V/5mA
V
CE
=5V, I
E
=
−10mA,
f=200MHz
V
CB
=10V, I
E
=0A, f=1MHz
I
B
=3mA, V
IN
=100mVrms, f=500kHz
MIN
12
6
3
TYP
MAX UNIT
V
V
V
0.3
V
0.5
μA
0.5
μA
560
MHz
1.7
pF
Ω
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Output-On Resistance
270
300
800
1
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R220-017.C
2SC4774
TYPICAL CHARACTERISTIC
Grounded Emitter Output Characteristics (Ⅰ)
10
Ta=25℃
35mA
30mA
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
8
6
25mA
20mA
15mA
4
10mA
5mA
I
B
=0μA
0
1
2
3
4
5
40
50
NPN SILICON TRANSISTOR
Grounded Emitter Output Characteristics (Ⅱ)
Ta=25℃
1.0m
A
A
A
m
.5
0.4m
0
0.3mA
0.2mA
30
0.1mA
20
2
0
10
0
0
0.1
0.2
0.3
I
B
=0mA
0.4
0.5
Collector to Emitter Voltage, V
CE
(V)
Collector to Emitter Voltage, V
CE
(V)
125
℃
-25℃
25℃
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
DC Current Transfer Ratio, h
FE
Collector Current, I
C
(mA)
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2SC4774
TYPICAL CHARACTERISTIC(Cont.)
NPN SILICON TRANSISTOR
Feeback Capacitiance, C
re
(pF)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Output Capacitiance, C
ob
(pF)
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QW-R220-017.C
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