UNISONIC TECHNOLOGIES CO., LTD
2SC5200
POWER AMPLIFIER
APPLICATIONS
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
ORDERING INFORMATION
Order Number
Lead Free
2SC5200-x-T3L-T
Halogen Free
2SC5200-x-T3L-T
Package
TO-3PL
Pin Assignment
1
2
3
B
C
E
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 4
QW-R214-005, B
2SC5200
ABSOLUTE MAXIMUM RATING
(T
C
=25°C)
NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
230
V
Collector-Emitter Voltage
V
CEO
230
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
15
A
Base Current
I
B
1.5
A
Collector Power Dissipation (T
C
=25°C)
P
C
150
W
Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-55 ~ 150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
=25°C)
SYMBOL
V
(BR) CEO
V
CE(SAT)
V
BE
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
OB
TEST CONDITIONS
I
C
= 50mA, I
B
=0
I
C
= 8A
,
I
B
= 0.8A
V
CE
= 5V, I
C
= 7A
V
CB
= 230V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
V
CE
= 5V, I
C
= 1A
V
CB
= 10V, I
E
=0, f=1MHz
MIN
230
TYP
0.4
1.0
MAX
3.0
1.5
5.0
5.0
160
UNIT
V
V
V
μA
μA
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
55
35
60
30
200
MHz
pF
CLASSIFICATION OF h
FE1
RANK
Range
R
55 ~ 110
O
80 ~ 160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R214-005, B
2SC5200
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Collector Current, I
C
(A)
Collector-Emitter Saturation Voltage vs.
Collector Current
Collector-Emitter Saturation
Voltage, V
CE(sat)
(V)
3
1
0.3
0.1
-25
25
COMMON EMITTER
I
C
/ I
B
= 10
10
0.1
1
Collector Current, I
C
(A)
100
T
C
=100℃
Collector current, I
C
(A)
DC Current Gain vs. Collector Current
300
DC Current Gain, h
FE
100
30
10
3
1
0.01
COMMON EMITTER
I
C
/ I
B
= 10
10
0.1
1
Collector Current, I
C
(A)
100
T
C
=100℃
25
-25
0.03
0.01
0.01
Safe Operating Area
50
I MAX. (PULSED)
C
30
I
C
MAX.
1ms
(CONTINUOUS)
10ms
10
100ms
DC OPERATION
5
T
C
=25°C
3
1
0.5
0.3
0.1
0.05
0.03
3
SINGLE NONREPETITIVE
PULSE T
C
= 25°C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
Collector current, I
C
(A)
V
CEO
MAX.
300 1000
10
30
100
Collector-Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R214-005, B
2SC5200
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R214-005, B
京公网安备 11010802033920号
EEWORLD
