UNISONIC TECHNOLOGIES CO., LTD
2SD2470
STROBO AND DC/DC
CONVERTERS
FEATURES
NPN SILICON TRANSISTOR
* Low saturation voltage
V= 0.25V(typ) at I
C
/I
B
= 3A/0.1A
* Collector current of 5A is possible
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
Ordering Number
Package
Lead Free
Halogen Free
-
2SD2470G-x-AB3-R
SOT-89
2SD2470L-x-T9S-B
2SD2470G-x-T9S-B
TO-92SP
2SD2470L-x-T9S-K
2SD2470G-x-T9S-K
TO-92SP
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
MARKING
SOT-89
UTC
SD2470
1
TO-92SP
L: Lead Free
G: Halogen Free
Data Code
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R216-003.I
2SD2470
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (PULSE) (Note 2)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise noted)
RATINGS
UNIT
15
V
10
V
10
V
5
A
8
A
SOT-89
0.5
W
Collector Power Dissipation
P
C
TO-92SP
0.4
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single Pulse =10ms
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
C
ob
TEST CONDITIONS
I
C
= 50μA
I
C
= 1mA
I
E
=50μA
V
CB
=10V, I
E
=0
V
EB
= 8V, I
C
=0
V
CE
= 2V, I
C
= 2A
I
C
/I
B
=3A /0.1A
V
CE
=6V, I
E
=0.05A, f=100MHz
V
CB
= 10V, I
E
= 0 A, f=1MHz
MIN
15
10
10
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
270
0.25
170
30
0.1
0.5
820
0.5
CLASSIFICATION OF h
FE
RANK
RANGE
S
270~560
E
450~820
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R216-003.I
2SD2470
TYPICAL CHARACTERISTICS
V
CE(SAT)
vs. I
C
1000
I
C
/I
B
=30
NPN SILICON TRANSISTOR
100
10
1
10m
100m
I
C
(A)
1
10
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R216-003.I
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