UNISONIC TECHNOLOGIES CO., LTD
2SD667
SILICON NPN EPITAXIAL
DESCRIPTION
NPN SILICON TRANSISTOR
The UTC
2SD667
is a NPN epitaxial silicon transistor, which can
be used as a low frequency power amplifier.
FEATURES
* Low frequency power amplifier
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD667L-x-T9N-B
2SD667G-x-T9N-B
2SD667L-x-T9N-K
2SD667G-x-T9N-K
Package
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
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Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R211-019.E
2SD667
ABSOLUTE MAXIMUM RATINGS
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
120
V
Collector to Emitter Voltage
V
CEO
80
V
Emitter to Base Voltage
V
EBO
6
V
Collector Current
I
C
1.0
A
Collector Peak Current (Note2)
I
CP
2.0
A
Collector Power Dissipation
P
C
0.9
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10ms, Duty cycle≤20%
ELECTRICAL CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
C
ob
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=1mA, R
BE
=∞
I
E
=10μA, I
C
=0
V
CB
=120V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
= -5V, I
C
= -150mA
V
CB
= -10V, I
E
=0, f=1MHz
MIN
120
80
6
TYP
MAX UNIT
V
V
V
500
nA
500
nA
320
0.5
1.1
140
20
V
V
MHz
pF
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Gain Bandwidth Product
Collector Output Capacitance
60
40
CLASSIFICATION OF h
FE1
RANK
RANGE
B
60-120
C
100-200
D
160-320
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QW-R211-019.E
2SD667
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-Emitter Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120
Collector-Emitter Voltage, V
CE
(V)
NPN SILICON TRANSISTOR
Collector Current vs. Collector-Base Voltage
12
10
8
6
4
2
0
0
50
100
150
200
250
Collector-Base Voltage, V
CB
(V)
Collector Current vs. Collector-
Emitter Voltage
Emitter Current vs. Emitter-Base Voltage
120
Collector Current, I
C
(mA)
100
Emitter Current, I
E
(μA)
80
60
40
20
0
0
2
4
6
8
10
Emitter-Base Voltage, V
EB
(V)
Collector Current vs. Collector-
Emitter Voltage
180
160
140
120
100
80
60
40
20
0
I
B
=1090μA
I
B
=890μA
I
B
=690μA
I
B
=490μA
I
B
=290μA
I
B
=90μA
0
1
2
3
4
5
6
7
Collector-Emitter Voltage, V
CE
(V)
Collector Current vs. Collector-
Emitter Voltage
12
12
10
8
6
4
2
0
0
120
100
80
60
40
20
0
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
I
B
=69.6μA
I
B
=59.6μA
I
B
=49.6μA
I
B
=39.6μA
I
B
=29.6μA
I
B
=19.6μA
I
B
=9.6μA
1
2
3
4
5
6
Collector-Emitter Voltage, V
CE
(V)
I
B
=707μA
I
B
=607μA
I
B
=507μA
I
B
=407μA
I
B
=307μA
I
B
=207μA
I
B
=107μA
0
I
B
=7μA
1
2
3
4
5
6
7
Collector-Emitter Voltage, V
CE
(V)
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2SD667
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-
Emitter Voltage
NPN SILICON TRANSISTOR
1200
1000
I
B
=13.25mA
800
600
400
200
0
0
2
4
6
8
10
Collector-Emitter Voltage, V
CE
(V)
I
B
=8.25mA
I
B
=3.25mA
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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