UTC 2SD718
NPN EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER
APPLICATION
FEATURES
*Recommended for 45~50W Audio Frequency
*Amplifier
Output Stage.
*Complementary to 2SB688.
1
TO-3P
1: BASE
2:COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
I
B
Pc
Tj
Tstg
RATINGS
120
120
5
10
1
80
150
-55 ~150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃,unless otherwise specified))
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR)CEO
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
Ic=50mA,I
B
=0
V
CB
=120V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=5V,Ic=1A
Ic=6A,I
B
=0.6A
V
CE
=5V,Ic=5A
V
CE
=5V,Ic=1A
V
CB
=10V,I
E
=0, f=1MHz
MIN
120
TYP
MAX UNIT
10
10
160
2.0
1.5
V
μA
μA
V
V
MHz
pF
55
12
170
CLASSIFICATION OF hFE
RANK
RANGE
R
55-110
O
80-160
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R214-003,A
UTC 2SD718
12
COLLECTOR CURRENT, Ic (A)
10
8
6
4
2
0
400
300
NPN EPITAXIAL SILICON TRANSISTOR
Ic - V
CE
DC CURRENT GAIN, h
FE
COMMON EMITTER
Tc=25°C
200
100
50
I
B
=20mA
0
1k
500
300
Tc=-25°C
Tc=25°C
Tc=100°C
ELECTRICAL CHARACTERISTICS CURVES
h
FE
- Ic
COMMON EMITTER
Vc
E
=5V
100
50
30
0
2
4
6
8
10
12
14
10
0.01
0.03
0.1
0.3
1
3
10
COLLECTOR-EMITTER VOLTAGE, V
CE
(V)
COLLECTOR CURRENT, Ic (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE, VCE(sat) (V)
COMMON EMITTER
0.5 Ic/I
B
=10
0.3
100
T c=
°C
1
COLLECTOR POWER DISSIPATION, Pc (W)
V
CE(sat)
- Ic
Pc - Ta
100
80
60
2
3
1
1 Ta=Tc
INFINITE HEAT SINK
2 300×300×2mm AI
HEAT SINK
3 200×200×2mm AI
HEAT SINK
4 100×100×2mm AI
HEAT SINK
5 NO HEAT SINK
0.1
0.05
0.03
0.01
0.01
Tc=25°C
Tc=-25°C
40
20
0
4
5
0
40
80
120
160
200
240
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT, Ic (A)
AMBIENT TEMPERATURE, Ta (℃ )
30
SAFE OPERATING AREA
I
C
MAX(PULSED) *
t=1mS *
10mS *
100mS *
COLLECTOR CURRENT, Ic (A)
10
I
C
MAX(CONTINUOUS)
S
AT
0m
R
50
PE 5
O =2
C Tc
D
*
3
°
N
O
I
C
1
*SINGLE NONREPETITIVE
PULSE Tc=25°C CURVES
MUST BE DERATED
LINEARLY WIHT INCREASE
IN TEMPERATURE.
V
CEO
MAX.
0.3
0.1
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE, V
CE
(V)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R214-003,A
UTC 2SD718
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R214-003,A
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