UNISONIC TECHNOLOGIES CO., LTD
BC327/328
PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* Suitable for AF-Driver stages and low power output stages
* Complement to UTC
BC337/338
1
TO-92
ORDERING INFORMATION
Package
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
C
B
E
C
B
E
C
B
E
C
B
E
Packing
Tape Box
Bulk
Tape Box
Bulk
Ordering Number
Lead Free
Halogen Free
BC327L-xx-T92-B
BC327G-xx-T92-B
BC327L-xx-T92-K
BC327G-xx-T92-K
BC328L-xx-T92-B
BC328G-xx-T92-B
BC328L-xx-T92-K
BC328G-xx-T92-K
Note: Pin Assignment: C: Collector B: Base
E: Emitter
MARKING
BC327
BC328
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
1 of 4
QW-R201-038.B
BC327/328
PARAMETER
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°С, unless otherwise specified)
SYMBOL
RATINGS
UNIT
BC327
-50
V
Collector-emitter voltage
V
CES
BC328
-30
V
BC327
-45
V
Collector-emitter voltage
V
CEO
BC328
-25
V
Emitter-base voltage
V
EBO
-5
V
Collector current (DC)
I
C
-800
mA
Collector dissipation
P
C
625
mW
Junction Temperature
T
J
125
°С
Operating Temperature
T
OPR
-20 ~ +85
°С
Storage Temperature
T
STG
-40 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
PARAMETER
SYMBOL
BC327
BC328
BC327
BC328
BC327
BC328
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE(SAT)
V
BE(ON)
f
T
C
ob
TEST CONDITIONS
I
C
=-10mA, I
B
=0
I
C
=-0.1mA, V
BE
=0
I
E
=-10mA, I
C
=0
V
CE
=-45V, I
B
=0
V
CE
=-25V, I
B
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-300mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-300mA
V
CE
=-5V, I
C
=-10mA,
f=20MHz
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-45
-25
-50
-30
-5
TYP
MAX UNIT
V
V
V
V
V
-100
V
-100
V
630
-0.7
-1.2
100
12
V
V
MHz
pF
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
DC current gain
Collector-emitter saturation voltage
Base-emitter on voltage
Current gain bandwidth product
Output Capacitance
-2
-2
100
40
CLASSIFICATION OF h
FE
RANK
h
FE1
h
FE2
16
100-250
60~
25
160-400
100~
40
250-630
170~
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-038.B
BC327/328
TYPICAL CHARACTERISTICS
PNP EPITAXIAL SILICON TRANSISTOR
Collector Current , I
C
(mA)
Collector Current , I
C
(mA)
Saturation Voltage, V
BE(sat)
, V
CE(sat)
, (V)
Figure 3. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
V
CE(sat)
I
C
=10I
B
PULSE
PULSE
V
CE
=-2.0V
-1.0V
-1
-0.1
V
BE(sat)
-0.01
-0.1
-1
-10
-100 -1000
1
-0.1
-1
-10
-100 -1000
Collector Current, I
C
(mA)
1000
DC Current Gain, h
FE
100
10
Collector Current, I
C
(mA)
-10
-1
-0.1
-0.4 -0.5
Gain-Bandwidth Product, f
T
(MHz)
Collector Current, I
C
(mA)
Figure 5. Base-Emitter On Voltage
-1000
V
CE
=-1V
PULSE
-100
Figure 6. Gain Bandwidth Product
1000
V
CE
=-0.5V
100
-0.6
-0.7 -0.8
-0.9
10
-1
-100
-1000
Base-Emitter On Voltage, V
BE
(V)
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R201-038.B
BC327/328
TYPICAL CHARACTERISTICS(Cont.)
Figure 5. Base-Emitter On Voltage
-1000
V
CE
=-1V
PULSE
-100
-10
-1
-0.1
-0.4 -0.5
PNP EPITAXIAL SILICON TRANSISTOR
Gain-Bandwidth Product, f
T
(MHz)
Collector Current, I
C
(mA)
Figure 6. Gain Bandwidth Product
1000
V
CE
=-0.5V
100
-0.6
-0.7 -0.8
-0.9
10
-1
-100
-1000
Base-Emitter On Voltage, V
BE
(V)
Collector Current, I
C
(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Power Dissipation, P
C
(W)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R201-038.B
京公网安备 11010802033920号
EEWORLD
