NUP1301
Ultra low capacitance ESD protection array
Rev. 01 — 11 May 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
protect one signal line in rail-to-rail configuration from the damage caused by ESD
and other transients.
1.2 Features
I
I
I
I
I
I
I
ESD protection of one signal line (rail-to-rail configuration)
Ultra low diode capacitance: C
d
= 0.6 pF
Very low reverse leakage current:
≤
30 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 11 A at t
p
= 8/20
µs
AEC-Q101 qualified
1.3 Applications
I
I
I
I
I
I
I
Telecommunication networks
Video line protection
Microcontroller protection
I
2
C-bus protection
Antenna power supply
Analog audio
Class-D amplifier
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RRM
C
d
I
R
repetitive peak reverse
voltage
diode capacitance
reverse current
f = 1 MHz;
V
R
= 0 V
V
R
= 80 V
-
-
-
-
0.6
-
80
0.75
100
V
pF
nA
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
NUP1301
Ultra low capacitance ESD protection array
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol Description
GND
V
CC
I/O
ground
supply voltage
input/output
1
2
3
3
Simplified outline
Graphic symbol
1
2
006aaa763
3. Ordering information
Table 3.
Ordering information
Package
Name
NUP1301
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
NUP1301
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking
Marking code
[1]
LJ*
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
I
FRM
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
t
p
≤
1 ms;
δ ≤
0.25
[1]
Parameter
Conditions
Min
-
-
-
-
Max
80
80
215
500
Unit
V
V
mA
mA
NUP1301_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2009
2 of 13
NXP Semiconductors
NUP1301
Ultra low capacitance ESD protection array
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
FSM
Parameter
non-repetitive peak
forward current
Conditions
square wave
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
Per device
P
PP
I
PP
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
[6]
[2]
Min
-
-
-
[3][4]
[3][4]
[5][6]
Max
4
1
0.5
220
11
250
150
+150
+150
Unit
A
A
A
W
A
mW
°C
°C
°C
peak pulse power
peak pulse current
total power dissipation
junction temperature
ambient temperature
storage temperature
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
T
j
= 25
°C
prior to surge.
t
p
= 8/20
µs
t
p
= 8/20
µs
T
amb
≤
25
°C
-
-
-
-
−55
−65
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Single diode loaded.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6.
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
[1][2]
Min
-
-
-
Max
30
400
10
Unit
kV
V
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
NUP1301_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2009
3 of 13
NXP Semiconductors
NUP1301
Ultra low capacitance ESD protection array
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Thermal characteristics
Table 8.
Symbol
Per device
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1][2]
Min
-
-
Typ
-
-
Max
500
360
Unit
K/W
K/W
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
NUP1301_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2009
4 of 13
NXP Semiconductors
NUP1301
Ultra low capacitance ESD protection array
7. Characteristics
Table 9.
Electrical characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
BR
V
F
breakdown voltage
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V;
T
j
= 150
°C
V
R
= 80 V;
T
j
= 150
°C
C
d
Per device
V
CL
clamping voltage
I
PP
= 1 A
I
PP
= 11 A
[1]
[2]
[3]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
[2][3]
[2][3]
Parameter
Conditions
I
R
= 100
µA
[1]
Min
100
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
0.6
-
-
Max
-
715
855
1
1.25
30
100
25
35
0.75
3
20
Unit
V
mV
mV
V
V
nA
nA
µA
µA
pF
V
V
diode capacitance
f = 1 MHz; V
R
= 0 V
NUP1301_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2009
5 of 13
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