THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD50P06-15L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 4.5 V
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Characteristics
b
I
SM
V
SD
I
F
= - 50 A, V
GS
= 0 V
-
-
-
- 0.8
- 200
- 1.5
A
V
V
DD
= - 30 V, R
L
= 0.6
I
D
- 50 A, V
GEN
= - 10 V, R
g
= 6.0
f = 1 MHz
V
GS
= - 10 V
V
DS
= - 30 V, I
D
= - 50 A
V
GS
= 0 V
V
DS
= - 25 V, f = 1 MHz
-
-
-
-
-
-
1.47
-
-
-
-
4730
485
330
98
15
21
2.9
15
12
112
39
5910
606
410
150
23
32
4.42
18
16
125
48
ns
nC
pF
g
fs
V
DS
= - 60 V
V
DS
= - 60 V, T
J
= 125 °C
V
DS
= - 60 V, T
J
= 175 °C
V
DS
-
5 V
I
D
= - 17 A
I
D
= - 50 A, T
J
= 125 °C
I
D
= - 50 A, T
J
= 175 °C
I
D
= - 14 A
- 60
- 1.5
-
-
-
-
- 50
-
-
-
-
-
-
-
-
-
-
-
-
0.0135
-
-
0.017
50
-
- 2.5
± 100
-1
- 50
- 150
-
0.0155
0.026
0.032
0.020
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= - 15 V, I
D
= - 17 A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2006-Rev. E, 20-Aug-12
Document Number: 69098
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD50P06-15L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
80
70
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
50
40
30
20
10
0
0
1
2
3
4
5
3V
V
GS
= 10 V thru 4 V
80
70
60
50
40
30
20
10
0
0.0
T
C
= 125 ° C
25 ° C
- 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Vishay Siliconix
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
100
T
C
= - 55 °C
80
g
fs
- Transconductance (S)
25 °C
125 °C
R
DS(on)
- On-Resistance ()
Transfer Characteristics
0.05
0.04
60
0.03
V
GS
= 4.5 V
0.02
40
20
0.01
V
GS
= 10 V
0
0
10
20
30
40
50
60
0
0
16
32
48
64
80
V
GS
- Gate-to-Source Voltage (V)
Transconductance
10
6000
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
I
D
= 14.4 A
V
GS
- Gate-to-Source Voltage (V)
5000
C - Capacitance (pF)
C
iss
8
V
DS
= 30 V
4000
3000
2000
C
oss
1000
C
rss
0
0
10
20
30
40
50
60
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
S12-2006-Rev. E, 20-Aug-12
Gate Charge
Document Number: 69098
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD50P06-15L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
1.8
R
DS(on)
- On-Resistance
1.6
(Normalized)
1.4
1.2
1.0
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
150
175
0.0
T
J
- Junction Temperature (°C)
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
1.5
V
GS
= 10 V
I
D
= 17 A
I
S
- Source Current (A)
100
Vishay Siliconix
T
J
= 150 °C
10
T
J
= 25 °C
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
I
DM
Limited
100
Limited by R
DS(on)
*
I
D
- Drain Current (A)
10
100 μs
I
D
Limited
1 ms
10 ms, 100 ms, 1
s,
10
s,
DC
1
0.1
T
C
= 25 °C
Single
Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
S12-2006-Rev. E, 20-Aug-12
Document Number: 69098
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?69098.
S12-2006-Rev. E, 20-Aug-12
Document Number: 69098
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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