PMZB290UN
83B
20 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
SO
T8
1.2 Features and benefits
Fast switching
Trench MOSFET technology
Low threshold voltage
Ultra thin package profile with
0.37 mm height
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; I
D
= 200 mA; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
-
Typ
-
-
-
290
Max
20
8
1
350
Unit
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NXP Semiconductors
PMZB290UN
20 V, single N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
3
2
Transparent
top view
G
S
017aaa253
Simplified outline
Graphic symbol
D
SOT883B (DFN1006B-3)
3. Ordering information
Table 3.
Ordering information
Package
Name
PMZB290UN
DFN1006B-3
Description
Leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.37 mm
Version
SOT883B
Type number
4. Marking
Table 4.
Marking codes
Marking code
0000 0101
Type number
PMZB290UN
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
PMZB290UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 11 May 2012
2 of 15
NXP Semiconductors
PMZB290UN
20 V, single N-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
[1]
[2]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-8
-
-
-
-
-
-
-55
-55
-65
T
amb
= 25 °C
[1]
Max
20
8
1
0.6
4
360
715
2700
150
150
150
0.67
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
junction temperature
ambient temperature
storage temperature
source current
Source-drain diode
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
P
der
(%)
80
001aao121
120
I
der
(%)
80
001aao122
40
40
0
-75
-25
25
75
125
T
j
(°C)
175
0
-75
-25
25
75
125
T
j
(°C)
175
Fig 2.
Normalized total power dissipation as a
function of junction temperature
Fig 3.
Normalized continuous drain current as a
function of junction temperature
PMZB290UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 11 May 2012
3 of 15
NXP Semiconductors
PMZB290UN
20 V, single N-channel Trench MOSFET
10
I
D
(A)
1
(1)
(2)
aaa-001944
limit R
DSon
= V
DS
/ I
D
10
-1
(3)
(4)
(5)
10
-2
10
-1
1
10
V
DS
(V)
10
2
I
DM
is single pulse
(1) t
p
= 1 ms
(2) DC; T
sp
= 25 °C
(3) t
p
= 10 ms
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
305
150
-
Max
360
175
40
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
PMZB290UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 11 May 2012
4 of 15
NXP Semiconductors
PMZB290UN
20 V, single N-channel Trench MOSFET
10
3
017aaa109
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
10
2
0.25
0.1
0.2
0.05
0.02
0.01
0
10
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 5.
10
3
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
10
2
0.5
0.25
0.1
0.05
0.02
0.01
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
0.33
0.2
0
10
10
−3
FR4 PCB, mounting pad for drain 1 cm
2
Fig 6.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB290UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 11 May 2012
5 of 15
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