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PSMN2R8-25MLC_15

Description
N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using
File Size343KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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PSMN2R8-25MLC_15 Overview

N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using

LF
PA
K
PSMN2R8-25MLC
N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using
NextPower Technology
Rev. 3 — 15 June 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
33
1.2 Features and benefits
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 10
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 10
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
V
GS
= 4.5 V; I
D
= 25 A; V
DS
= 12.5 V;
see
Figure 12;
see
Figure 13
V
GS
= 4.5 V; I
D
= 25 A; V
DS
= 12.5 V;
see
Figure 12;
see
Figure 13
-
-
3.9
16.3
-
-
nC
nC
Conditions
T
j
= 25°C
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
-
Typ
-
-
-
-
3.25
2.45
Max
25
70
88
175
3.75
2.8
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
[1]
Continuous current is limited by package.
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