Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω) at V
GS
= 4.5 V
R
DS(on)
(Ω) at V
GS
= 2.5 V
I
D
(A)
Configuration
Package
20
0.415
0.600
0.78
Dual
SC-70
FEATURES
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
c
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SOT-363
SC-70
Dual (6 leads)
G
2
5
S
2
4
D
1
D
2
D
1
6
G
1
3
D
2
S
1
N-Channel MOSFET
G
2
1
S
1
Top View
2
G
1
S
2
N-Channel MOSFET
Marking Code:
9P
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
SYMBOL
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
S
I
DM
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
20
± 12
0.78
0.45
0.54
3
3.5
0.6
0.43
0.14
-55 to +175
UNIT
V
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB Mount
b
SYMBOL
R
thJA
R
thJF
LIMIT
460
350
UNIT
°C/W
S15-1917-Rev. A, 17-Aug-15
Document Number: 62977
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ1902AEL
www.vishay.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 4.5 V
V
GS
= 4.5 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
Forward Transconductance
b
Dynamic
b
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
20
0.6
-
-
-
-
0.8
-
-
-
-
-
-
V
GS
= 0 V
V
DS
= 10 V, f = 1 MHz
-
-
-
V
GS
= 4.5 V
V
DS
= 10 V, I
D
= 1.2 A
f = 1 MHz
V
DD
= 10 V, R
L
= 20
Ω
I
D
≅
0.5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
-
-
4.5
-
-
-
-
b
TYP.
-
1.0
-
-
-
-
-
0.200
-
-
0.250
1.1
50
21
9
0.7
0.1
0.1
9.1
10
22
20
18
-
0.85
MAX.
-
1.5
± 100
1
50
150
-
0.415
0.594
0.698
0.600
-
75
28
15
1.2
-
-
13.7
15
30
28
25
3
1.2
UNIT
V
nA
μA
A
V
DS
= 20 V
V
DS
= 20 V, T
J
= 125 °C
V
DS
= 20 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 0.66 A
I
D
= 0.66 A, T
J
= 125 °C
I
D
= 0.66 A, T
J
= 175 °C
I
D
= 0.4 A
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
V
DS
= 10 V, I
D
= 1 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain
Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
Fall Time
c
Pulsed Current
a
Forward Voltage
c
pF
nC
Ω
Turn-Off Delay Time
c
ns
Source-Drain Diode Ratings and Characteristics
-
I
F
= 0.5 A, V
GS
= 0
-
A
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1917-Rev. A, 17-Aug-15
Document Number: 62977
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ1902AEL
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.0
V
GS
= 5 V thru 2 V
0.8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
0.8
1.0
Vishay Siliconix
0.6
0.6
0.4
V
GS
= 1.5 V
0.2
V
GS
= 1 V
0.0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
0.4
T
C
= 25
°C
0.2
T
C
= 125
°C
0.0
0.0
0.5
1.0
1.5
2.0
V
GS
-
Gate-to-Source
Voltage (V)
2.5
T
C
= - 55
°C
Output Characteristics
0.50
100
Transfer Characteristics
0.40
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
80
0.30
V
GS
= 2.5 V
0.20
V
GS
= 4.5 V
0.10
60
C
iss
40
C
oss
20
C
rss
0.00
0.0
0.2
0.4
0.6
I
D
- Drain Current (A)
0.8
1.0
0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
I
D
= 1.2 A
4
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
1.7
2.0
I
D
= 0.66 A
Capacitance
V
GS
= 4.5 V
1.4
V
GS
= 2.5 V
1.1
3
2
1
0.8
0
0.0
0.2
0.4
0.6
0.8
1.0
Q
g
- Total
Gate
Charge (nC)
0.5
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
S15-1917-Rev. A, 17-Aug-15
On-Resistance vs. Junction Temperature
Document Number: 62977
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ1902AEL
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1
1.0
Vishay Siliconix
0.1
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.8
I
S
-
Source
Current (A)
0.6
0.01
T
J
= 25
°C
0.4
T
J
= 150
°C
0.2
T
J
= 25
°C
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
28
On-Resistance vs. Gate-to-Source Voltage
I
D
= 1 mA
0.2
V
GS(th)
Variance (V)
I
D
= 5 mA
V
DS
- Drain-to-Source Voltage (V)
150
175
27
- 0.1
26
I
D
= 250 μA
- 0.4
25
- 0.7
24
- 1.0
- 50
- 25
0
25
50
75
100
125
23
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
10
I
DM
Limited
Drain Source Breakdown vs. Junction Temperature
100 μs
I
D
- Drain Current (A)
1
Limited by R
DS(on)
*
1 ms
10 ms
0.1
100 ms
BVDSS Limited
T
C
= 25
°C
Single
Pulse
0.01
0.01
1
s
10
s,
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
S15-1917-Rev. A, 17-Aug-15
Document Number: 62977
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?62977.
S15-1917-Rev. A, 17-Aug-15
Document Number: 62977
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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