Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
breakdown voltage:
V
CBO
=900V(Min)
・Fast
switching speed.
・Wide
ASO (Safe Operating Area)
APPLICATIONS
・800V/1.5A
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3149
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
900
800
7
1.5
5
0.8
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=5mA ; R
BE
=∞
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
B
=0
I
C
=0.75A; I
B
=0.15A
I
C
=0.75A; I
B
=0.15A
V
CB
=800V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
I
C
=0.1A ; V
CE
=10V
f=10MHz ; V
CB
=10V
10
8
15
30
MIN
800
900
7
TYP.
2SC3149
MAX
UNIT
V
V
V
2.0
1.5
10
10
40
V
V
μA
μA
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
V
CC
=400V; I
C
=1A
I
B1
=0.2A;I
B2
=-0.4A;
R
L
=400Ω
1.0
3.0
0.7
μs
μs
μs
h
FE-1
classifications
K
10-20
L
15-30
M
20-40
2
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3149
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC3149
4
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