5
th
Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. A combination with a new, more compact design and thin-
wafer technology results is a new family of products showing improved efficiency
over all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
IDW40G65C5B
1
2
3
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
2) 3)
Breakdown voltage tested at 44 mA
Optimized for high temperature operation
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
4)
Benefits
Applications
Table 1
Key Performance Parameters
Parameter
Value
Unit
V
DC
650
V
Q
C
;
V
R
=400V
2 x 29
nC
E
C
;
V
R
=400V
2 x 6.6
µJ
I
F
@ T
C
< 120°C
2 x 20
A
Table 2
Pin 1
A
Pin Definition
Pin 2
Pin 3
C
A
Package
PG-TO247-3
Type / ordering Code
IDW40G65C5B
Marking
D4065B5
Related links
www.infineon.com/sic
1)
2)
3)
4)
J-STD20 and JESD22
All devices tested under avalanche conditions for a time periode of 10ms
Per Leg
Per Device
Final Datasheet
2
Rev. 2.0, 2015-04-13
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW40G65C5B
Table of contents
Table of Contents
1
2
3
4
5
6
7
8
Description .......................................................................................................................................... 2
Maximum ratings ................................................................................................................................ 4
Thermal characteristics ..................................................................................................................... 4
Electrical characteristics ................................................................................................................... 5
Electrical characteristics diagrams .................................................................................................. 6
Simplified Forward Characteristics Model ...................................................................................... 8
Package outlines ................................................................................................................................ 9
Revision History ............................................................................................................................... 10
Final Datasheet
3
Rev. 2.0, 2015-04-13
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW40G65C5B
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Min.
1)
Values
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
-55
–
Max.
20
103
87
776
53
38
650
100
112
175
60
Unit
Note/Test Condition
T
C
< 120°C, D=1
Continuous forward current
I
F
Surge non-repetitive forward current, sine
I
F,SM
1)
halfwave
Non-repetitive peak forward current
i²t value
1)
1)
A
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
T
C
= 25°C,
t
p
=10 µs
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
T
j
= 25°C
V
R
=0..480 V
T
C
= 25°C
M3 screws
I
F,max
∫ i²dt
V
RRM
dv/dt
P
tot
T
j
;T
stg
A²s
V
V/ns
W
°C
Ncm
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Mounting torque
1)
Operating and storage temperature
3
Table 4
Parameter
Thermal characteristics
Thermal characteristics TO-247-3
Symbol
Min.
1)
1)
Values
–
–
–
Typ.
1.0
–
–
Max.
1.3
62
260
Unit
Note/Test Condition
Thermal resistance, junction-case
R
thJC
R
thJA
T
sold
Thermal resistance, junction-ambient
K/W
leaded
1.6mm (0.063 in.) from
case for 10 s
Soldering temperature, wavesoldering
only allowed at leads
°C
1)
2)
Per Leg
Per Device
Final Datasheet
4
Rev. 2.0, 2015-04-13
Embedded System
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