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BSC0503NSI

Description
Metal Oxide Semiconductor Field Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size1MB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC0503NSI Overview

Metal Oxide Semiconductor Field Effect Transistor

BSC0503NSI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F5
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)10 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.0037 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)352 A
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
5Power-MOSFET,30V
BSC0503NSI
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket

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