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BUK7Y15-60E_15

Description
N-channel 60 V, 15 mΩ standard level MOSFET in LFPAK56
File Size341KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK7Y15-60E_15 Overview

N-channel 60 V, 15 mΩ standard level MOSFET in LFPAK56

LF
BUK7Y15-60E
7 May 2013
PA
K
56
N-channel 60 V, 15 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 11
I
D
= 15 A; V
DS
= 48 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
8.3
-
nC
Min
-
-
-
Typ
-
-
-
Max
60
53
94
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
9.6
15
Dynamic characteristics
Q
GD
gate-drain charge
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