BUK9Y43-60E_15 datasheet, PDF - EEWORLD Datasheet

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BUK9Y43-60E_15: DescriptionN-channel 60 V, 43 mÎ© logic level MOSFET in LFPAK56; File Size342KB，13 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BUK9Y43-60E_15 Overview

N-channel 60 V, 43 mÎ© logic level MOSFET in LFPAK56

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BUK9Y43-60E

8 May 2013

N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

•

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V

GS(th)

rating of greater than 0.5 V at 175 °C

3. Applications

•

12 V Automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

Conditions

≥ 25 °C; T

≤ 175 °C

= 5 V; T

= 25 °C;

Fig. 1

= 25 °C;

Fig. 2

= 5 V; I

= 5 A; T

= 25 °C;

Fig. 11

Min

Typ

Max

Unit

Static characteristics

drain-source on-state

resistance

gate-drain charge

35.8

mΩ

Dynamic characteristics

= 5 V; I

= 5 A; V

= 48 V;

= 25 °C;

Fig. 13; Fig. 14

3.4

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