DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAP64-02
Silicon PIN diode
Product specification
Supersedes data of 1999 Sep 21
2000 Mar 23
Philips Semiconductors
Product specification
Silicon PIN diode
FEATURES
•
High voltage, current controlled
•
RF resistor for RF attenuators and switches
•
Low diode capacitance
•
Low diode forward resistance
•
Very low series inductance
•
For applications up to 3 GHz.
handbook, halfpage
BAP64-02
PINNING
PIN
DESCRIPTION
cathode
anode
APPLICATIONS
•
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small plastic SMD
package.
Marking code:
S.
Fig.1 Simplified outline (SOD523) and symbol.
2
1
2
Top view
1
MAM405
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
CONDITIONS
MIN.
−
−
−
−65
−65
MAX.
175
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
2000 Mar 23
2
Philips Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse leakage current
diode capacitance
CONDITIONS
I
F
= 50 mA
V
R
=175 V
V
R
= 20 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
f = 100 MHz; note 1
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
τ
L
charge carrier life time
20
10
2
0.7
TYP.
0.95
−
−
0.48
0.35
0.23
BAP64-02
MAX.
1.1
10
1
−
−
0.35
40
20
3.8
1.35
−
UNIT
V
µA
µA
pF
pF
pF
Ω
Ω
Ω
Ω
µs
when switched from I
F
= 10 mA to 1.55
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
0.6
L
S
Note
series inductance
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
2000 Mar 23
3
Philips Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP64-02
handbook, halfpage
10
2
MGL856
500
handbook, halfpage
Cd
(fF)
400
MGL857
rD
(Ω)
10
300
200
1
100
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
°C.
f = 1 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
S
2
0
MGL858
handbook, halfpage
(1)
(2)
0
MGL859
21
(dB)
−1
(3)
S21
2
(dB)
−10
−2
(4)
−3
−20
−4
−5
0.5
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
1
1.5
2
2.5
f (GHz)
3
−30
0.5
1
1.5
2
2.5
f (GHz)
3
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Diode inserted in series with a 50
Ω
stripline circuit
and biased via the analyzer Tee network; T
amb
= 25
°C.
Fig.4
Insertion loss (S
21
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (S
21
2
) of the diode as a function
of frequency; typical values.
2000 Mar 23
4
Philips Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BAP64-02
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.7
0.5
bp
0.35
0.25
c
0.2
0.1
D
1.3
1.1
E
0.9
0.7
HE
1.7
1.5
v
0.15
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
EIAJ
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
2000 Mar 23
5
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