CHA2194
RoHS COMPLIANT
36-44GHz Low Noise Amplifier
Self biased
GaAs Monolithic Microwave IC
Description
The circuit is a three-stage self biased wide
band monolithic low noise amplifier,
designed for 36GHz to 44GHz point to point
and point to multipoint communication
.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
22
24
26
28
30
32
34
36
38
40
42
25,00
Main Features
Broad band performance 36-44GHz
3dB noise figure
19dB gain,
±
0.5dB gain flatness
Low DC power consumption, 45mA
20dBm 3rd order intercept point
Chip size : 1.670 x 0.970x 0.1mm
Gain & NF ( dB )
15,00
5,00
-5,00
-15,00
dBS21
NF
dBS11
dBS22
-25,00
44
46
48
50
52
54
56
58
60
Frequency ( GHz )
Main Characteristics
Tamb = +25°
C
Symbol
NF
G
∆G
Parameter
Noise figure at freq : 40GHz
Gain
Gain flatness
On wafer typical measurement
Min
Typ
3
Max
4
Unit
dB
dB
17
19
±
0.5
±
1
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA21942035 -04-Feb.-02
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
RLosses(dB)
CHA2194
Electrical Characteristics
Tamb = +25° Vd = +3,5V (On wafer)
C,
Symbol
Fop
G
∆G
NF
VSWRin
VSWRout
IP3
P1dB
Id
Parameter
Operating frequency range
Gain (1)
Gain flatness (1)
Noise figure (1) (freq: 36-40 GHz)
Input VSWR (1)
Ouput VSWR (1)
3rd order intercept point
36-44GHz Low Noise Amplifier
Min
36
17
Typ
Max
44
Unit
Ghz
dB
19
±
0.5
3
2.5:1
2:5:1
20
±
1
4
3.0:1
3.0:1
dB
dB
dBm
dBm
75
mA
Output power at 1dB gain compression
Drain bias current (2)
8
10
45
(1)These values are representative of wafer measurements without bonding wire at the RF ports.
(2) This current is the typical value for low noise and low current consumption biasing:
Vd=3.5V, Vg12 and Vg3 not connected.
Absolute Maximum Ratings
(3)
Tamb = +25°
C
Symbol
Vd
Vg
Id
Pin
Top
Tstg
Parameter
Drain bias voltage (5)
Vg12 and Vg3 max
Drain current
Maximum peak input power overdrive (4)
Operating temperature range
Storage temperature range
Values
4
+1
75
15
-40 to +85
-55 to +125
Unit
V
V
mA
dBm
°
C
°
C
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options page 9
Ref : DSCHA21942035 -04-Feb.-02
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-44GHz Low Noise Amplifier
Typical Result
Chip Typical Response ( On wafer Scattering parameters ) :
Tamb = +25°
Vd=3.5V Id=+42mA
C
F(GHz)
S11
S12
S21
CHA2194
S22
2,00
4,00
6,00
8,00
10,00
12,00
14,00
16,00
18,00
20,00
22,00
24,00
25,00
26,00
27,00
28,00
29,00
30,00
31,00
32,00
33,00
34,00
35,00
3 6 ,0 0
3 7 ,0 0
3 8 ,0 0
3 9 ,0 0
4 0 ,0 0
4 1 ,0 0
4 2 ,0 0
4 3 ,0 0
4 4 ,0 0
45,00
46,00
47,00
48,00
49,00
50,00
mod
dB
-4,39
-3,92
-3,01
-2,33
-1,87
-1,57
-1,35
-1,25
-1,16
-1,09
-1,01
-0,99
-1,00
-1,05
-1,15
-1,42
-2,17
-4,74
-11,78
-17,20
-16,20
-17,00
-19,78
-20,49
-17,37
-14,90
-14,38
-14,17
-14,23
-14,45
-13,44
-11,65
-9,14
-6,61
-4,21
-3,45
-2,71
-2,35
Pha
deg
-56,73
-86,19
-111,00
-132,18
-149,64
-164,59
-177,94
169,65
157,50
144,51
130,06
113,68
104,41
93,20
80,32
63,49
40,77
10,16
-12,14
17,23
20,67
-2,28
-48,40
-119,64
-175,00
1 4 8 ,1 9
1 1 9 ,4 0
9 9 ,7 8
8 1 ,4 1
6 8 ,0 4
5 4 ,3 1
3 7 ,4 4
15,96
-8,98
-34,87
-62,16
-84,52
-102,45
mod
dB
-75,42
-68,73
-68,42
-62,78
-58,07
-54,16
-51,89
-52,93
-51,04
-49,77
-48,14
-47,48
-48,97
-48,69
-48,51
-49,95
-47,16
-44,24
-41,60
-41,18
-41,81
-39,78
-39,87
-39,25
-37,96
-36,53
-35,30
-33,63
-33,70
-32,62
-32,01
-31,08
-30,72
-31,56
-33,12
-35,95
-37,02
-38,27
Pha
deg
44,36
-0,07
-40,89
-61,43
-92,78
-118,46
-167,25
158,44
165,85
164,40
114,15
73,88
61,97
52,80
18,34
6,77
-37,23
-94,27
-147,89
175,51
148,47
125,02
112,63
9 8 ,4 5
8 6 ,4 5
7 6 ,6 1
5 7 ,4 6
3 8 ,2 6
2 0 ,3 7
5 ,4 9
-15,03
-35,85
-59,51
-86,95
-117,26
-136,86
-153,94
165,40
mod
dB
-37,71
-38,99
-38,00
-31,40
-22,10
-15,19
-11,48
-10,44
-11,48
-15,47
-22,72
-18,51
-10,74
-4,00
1,96
7,45
12,59
16,78
18,62
18,62
18,49
18,57
18,87
1 9 ,3 0
1 9 ,6 0
1 9 ,7 0
1 9 ,6 0
1 9 ,5 1
1 9 ,1 2
1 9 ,0 6
1 9 ,1 0
1 9 ,0 6
18,88
18,39
17,52
15,52
13,00
10,38
Pha
deg
179,84
144,86
82,75
-24,55
-68,40
-121,90
-177,68
129,48
84,35
49,64
64,72
144,50
152,58
142,49
125,50
100,83
70,07
28,35
-19,04
-57,49
-87,41
-113,67
-138,52
-164,01
1 7 0 ,4 4
1 4 3 ,8 2
1 1 8 ,7 1
9 4 ,3 1
7 0 ,5 6
4 6 ,8 4
2 2 ,8 0
-3,12
-30,61
-60,43
-91,46
-122,46
-148,98
-171,73
mod
dB
-0,11
-0,41
-0,87
-1,53
-2,33
-3,50
-4,77
-6,27
-8,13
-12,66
-16,87
-25,93
-35,08
-27,71
-25,75
-22,24
-25,05
-21,79
-15,03
-13,03
-12,36
-11,84
-11,68
-11,17
-10,94
-10,68
-10,97
-10,84
-10,39
-10,36
-9,76
-9,13
-9,22
-9,63
-10,19
-11,03
-10,81
-9,71
Pha
deg
-26,01
-51,53
-75,92
-98,47
-120,41
-140,34
-158,48
-176,02
163,01
138,91
134,36
129,23
177,75
-121,39
-116,09
-115,84
-110,45
-68,00
-77,79
-96,11
-107,46
-116,00
-122,31
-127,64
-133,38
-140,12
-145,87
-148,12
-154,43
-159,30
-166,74
1 7 8 ,4 1
158,00
130,78
94,17
49,86
7,88
-23,44
Ref : DSCHA21942035 -04-Feb.-02
3/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2194
Typical Results
36-44GHz Low Noise Amplifier
Chip Typical Response (On wafer Scattering parameters)
Tamb = +25°
C
Vd = 3.5V Vg12& Vg3 not connected; Id = 42mA
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
25,00
15,00
Gain & NF ( dB )
-5,00
-15,00
dB 21
S
N
F
dB 11
S
dB 22
S
-25,00
F u cy( G z)
req en
H
22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60
Typical Gain , Matching and Noise Figure ( Measurements on wafer.)
Ref : DSCHA21942035 -04-Feb.-02
4/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
RLosses(dB)
5,00
36-44GHz Low Noise Amplifier
Typical Results
Chip Typical Response (In test Jig)
Vd = 3.5V Vg12& Vg3 not connected; Id = 42mA
Typical gain slope versus temperature : -0.025dB/°C
Typical noise figure slope versus temperature : 0.011dB/°
C
CHA2194
25
23
21
19
17
15
13
Ga(dB)
11
9
7
5
3
1
-1
-3
-5
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49
Gain Vd:3,5V 42mA T:+25°
C
Gain Vd=3,5V 47mA T:+85°
C
Gain Vd:3,5V 57mA T:-40°
C
NF Vd=3,5V +25°
C
NF Vd=3,5V +85°
C
NF Vd=3,5V -40°
C
14
12
10
8
6
4
2
0
frequency (GHz)
NF(dB)
Gain (dB)
Typical Gain and NF versus temperature (measurements in test jig )
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
Input power (dBm)
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
-5
-4
Output Power (dBm)
Pout (dBm) 40GHz +25°C
Pout (dBm) 40GHz +85°C
Pout (dBm) 40GHz -40°C
GAIN (dB) 40GHz +25°C
GAIN (dB) 40GHz +85°C
GAIN (dB) 40GHz -40°C
-20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10
-9
-8
-7
-6
Typical Gain & Pout versus temperature (measurements in test-jig)
Ref : DSCHA21942035 -04-Feb.-02
5/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
京公网安备 11010802033920号
EEWORLD
