BUK964R7-80E_15 datasheet, PDF

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BUK964R7-80E_15: DescriptionN-channel TrenchMOS logic level FET; File Size252KB，13 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BUK964R7-80E_15 Overview

N-channel TrenchMOS logic level FET

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BUK964R7-80E

13 March 2014

N-channel TrenchMOS logic level FET

Product data sheet

1. General description

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

2. Features and benefits

•

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C

3. Applications

•

12V, 24V and 48V Automotive systems

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

Conditions

≥ 25 °C; T

≤ 175 °C

= 5 V; T

= 25 °C;

Fig. 2

= 25 °C;

Fig. 1

= 5 V; I

= 25 A; T

= 25 °C;

Fig. 11

[1]

Min

Typ

Max

120

324

Unit

Static characteristics

drain-source on-state

resistance

gate-drain charge

3.6

4.7

mΩ

Dynamic characteristics

= 5 V; I

= 25 A; V

= 64 V;

Fig. 13; Fig. 14

[1]

Continuous current is limited by package.

28.9

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