JMnic
Product Specification
Silicon NPN Power Transistors
2SC3949
DESCRIPTION
・With
TO-3PML package
・High
voltage ,high speed
APPLICATIONS
・For
TV horizontal output and power
switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
MAX
850
500
7
15
80
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC3949
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ;R
BE
=∞
500
V
V
(BR)CBO
V
(BR)EBO
Collector-base breakdown voltage
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
850
V
Emitter-base breakdown voltage
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=10A ;I
B
=2A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=10A ;I
B
=2A
V
CE
=800V; I
E
=0
T
C
=100℃
V
EB
=6V ;I
C
=0
1.5
0.1
1.0
0.1
V
I
CBO
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE
f
T
DC current gain
I
C
=10A ; V
CE
=5V
I
C
=2A ; V
CE
=10V
10
30
Transition frequency
20
MHz
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V;f=1MHz
260
pF
2
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