SEMICONDUCTOR
85D(R)Series
Glass Passivated Standard Recovery Diodes
(Stud Version), 85A
RoHS
RoHS
Nell High Power Products
FEATURES
Glass passivated chips
High surge current capability
Stud cathode and stud anode version
Wide current range
Voltage up to 1600V V
RRM
RoHS compliant
TYPICAL APPLICATIONS
Battery charges
Converters
Power supplies
Machine tool controls
Welder
DO-203AB(DO-5)
PRODUCT SUMMARY
I
F(AV)
85A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
85D(R)
02 TO 12
85
140
133
110
16
UNIT
A
ºC
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
T
C
A
A
A
2
s
50 HZ
60 HZ
50 HZ
60 HZ
Range
1700
595
14450
13170
200 to 1200
-65 to 180
1600
-65 to 150
V
ºC
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
,MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
,MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
V
RRM
,MAXIMUM
TJ-TJ=Maximum
mA
02
04
06
85D( R )
200
400
600
800
1000
1200
1600
300
500
700
9
900
1100
1300
1700
4.5
08
10
12
16
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Page 1 of 7
SEMICONDUCTOR
85D(R)Series
RoHS
RoHS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
85D(R)
02 TO 12
85
140
133
110
16
UNIT
A
ºC
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-reptitive surge current
A
t
= 10ms
I
FSM
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
t
= 8.3ms
t
= 10ms
t
= 8.3ms
No voltage
reapplied
100%V
RRM
reapplied
No voltage
reapplied
100%V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
1700
1800
1450
1500
14450
13170
10230
9340
144500
1.2
1.4
A
2
√
s
V
A
Maximum l²t for fusing
I
2
t
A
2
s
Maximum l²√t for fusing
Maximum forward voltage drop
I
2
√t
V
FM
t = 0.1 to 10 ms, no voltage reapplied
l
pk
= 267A, T
J
= 25˚C, t
p
= 400µs rectangular wave
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
85D(R)
02 TO 12
16
UNIT
Maximum junction operating and
storage temperature range
Maximum thermal resistace,
junction to case
Maximum thermal resistance
case to heatsink
T
J
- 65 to180 - 65 to150
ºC
R
thJC
DC operation
0.35
K/W
R
thCS
Mounting surface, smooth, flat and greased
Not lubricated thread ,tighting on nut
(1)
0.25
3.4(30)
2.3(20)
4.2(37)
3.2(28)
15
0.53
N
·
m
(lbf
·
in)
N
·
m
(lbf
·
in)
Maximum allowable mounting torque
(+0% , -10%)
Lubricated thread ,tighting on nut
(1)
Not lubricated thread ,tighting on hexagon
(2)
Lubricated thread ,tighting on hexagon
(2)
Approximate weight
Case style
Note
(1) Recommended for pass-through holes.
(2) Recommended for holed threaded heatsinks.
g
oz.
See dimensions - link at the end of datasheet
DO-203AB (DO-5)
ΔR
thJC
CONDUCTION
CONDUCTION ANGEL
180˚
120˚
90˚
60˚
30˚
SINUSOIDAL CONDUCTION
0.10
0.11
0.13
0.17
0.26
RECTANGULAR CONDUCTION
0.08
0.11
0.13
0.17
0.26
T
J
= T
J
maximum
TEST CONDUCTIONS
UNITS
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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Page 2 of 7
SEMICONDUCTOR
85D(R)Series
RoHS
RoHS
Nell High Power Products
Fig.1 Current Ratings Characteristics
180
85D(R)
Series(200V to 1200V)
R
thJC
(DC) = 0.35 K/W
Fig.2 Current Ratings Characteristics
150
85D(R)
Series(1600V)
R
thJC
(DC) = 0.35 K/W
Maximum Allowable Case Temperature(˚C)
170
Maximum Allowable Case Temperature(˚C)
140
160
Conduction Angle
130
Conduction Angle
150
30°
120
30°
60°
140
60°
90°
120°
180°
110
90°
120°
180°
130
0
10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
100
0
10 20 30 40
50 60 70 80 90 100
Average Forward Current (A)
Fig.3 Current Ratings Characteristics
180
85D(R)
Series(200V to 1200V)
R
thJC
(DC) = 0.35 K/W
Fig.4 Current Ratings Characteristics
150
85D(R)
Series(1600V)
R
thJC
(DC) = 0.35 K/W
Maximum Allowable Case Temperature(˚C)
170
Maximum Allowable Case Temperature(˚C)
140
160
Conduction Period
130
Conduction Period
150
30°
140
60°
90°
120°
180°
DC
130
0
20
40
60
80
100
120
140
120
30°
110
60°
90°
120°
DC
100
0
20
40
60
80
100
120
140
180°
Average Forward Current (A)
Average Forward Current (A)
Fig.5 Forward Power Loss Characteristics
90
Maximum Average Forward Power Loss (W)
80
70
60
RMS Limit
180°
120°
90°
60°
30°
1.
5
R
W
K
/
0.7
A
thS
1
K
/
W
K
/
W
K
/
W
.5
=0
2
K
/
W
aR
elt
-
D
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
Conduction Period
85D(R)
Series
(200V
to 1200V)
T J = 180°C
3
K
/
W
5
K
/
W
10
K
/
W
20
40
60
80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
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Page 3 of 7
SEMICONDUCTOR
85D(R)Series
Fig.6 Forward Power Loss Characteristics
120
RoHS
RoHS
Nell High Power Products
Maximum Average Forward Power Loss (W)
DC
180°
R
th
7
0.
100
120°
90°
60°
30°
1
K
/
W
SA
W
K
/
=
W
K
/
0.5
80
1.5
K
/
W
2
K
/
W
aR
elt
-
D
60
RMS Limit
3
K
/
W
40
Conduction Period
5
K
/
W
20
0
0
20
40
60
80
85D(R)
Series
(200V
to 1200V)
T J = 180°C
10
K
/
W
100
120
140
20
40
60
80
100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.7 Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
100
90
80
70
60
50
40
30
20
10
0
0
10
20
180°
120°
90°
60°
30°
RMS Limit
R
th
7
0.
1
K
/
W
SA
W
K
/
=
W
K
/
0.5
1.5
K
/
W
2
K
/
W
3
K
/
W
aR
elt
-
D
Conduction Angle
85D(R)
Series
(1600V)
T J = 150°C
5
K
/
W
10
K
/
W
30
40
50
60
70
80
90
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.8 Forward Power Loss Characteristics
140
Maximum Average Forward Power Loss (W)
DC
120
100
80
60
40
20
0
0
20
180°
R
t
120°
90°
60°
30°
A
hS
=
5
0.
0.
7
K
/
W
W
K
/
1
K
/
W
ta
el
-
D
R
RMS Limit
Conduction Period
85D(R)
Series
(1600V)
T J = 150°C
1.5
K
/
W
2
K
/
W
3
K
/
W
5
K
/
W
10
K
/
W
40
60
80
100
120
140
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
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Page 4 of 7
SEMICONDUCTOR
85D(R)Series
RoHS
RoHS
Nell High Power Products
Fig.9 Maximum Non-Repetitive Surge Current
Fig.10 Maximum Non-Repetitive Surge
Current
Peak Half Sine Wave Forward Current (A)
1800
1600
1400
1200
1000
800
600
400
200
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= T
J
Max.
No Voltage Reapplied
Reted V
RRM
Reapplied
Peak Half Sine Wave Forward Current (A)
1600
1400
1200
1000
800
600
400
1
At Any Rated Load Condition And With
At Rated V
RRM
Applied Following Surge.
Initial T
J
= T
J
Max.
@60 Hz 0.0083 s
@50 Hz 0.0100 s
10
100
0.1
Pulse Train Duration (S)
1
Number Of Equal Amplitude Half Cycle
current Pulses(N)
Fig.11 Forward Voltage Drop Characteristics
(Up To 1200V)
10000
Instantaneous Forward Current (A)
Instantaneous Forward Current (A)
Fig.12 Forward Voltage Drop Characterisics
(for 1600V)
1000
T
J
= 25°C
T
J
= T
J
Max.
T
J
= T
J
Max.
1000
100
T
J
= 25°C
100
85D(R)
Series
up to 1200V
10
10
0
1
2
3
4
5
6
1
0
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
Fig.13 Thermal Impedance Z
thJC
Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
10
Steady State Value
R
thJC
= 0.35 K/W
(DC Operation)
1
0.1
0.01
0.001
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
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Page 5 of 7
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