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BUK7K17-60E_15

Description
Dual N-channel 60 V, 14 m standard level MOSFET
File Size335KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK7K17-60E_15 Overview

Dual N-channel 60 V, 14 m standard level MOSFET

LF
BUK7K17-60E
10 December 2013
PA
K
56D
Dual N-channel 60 V, 14 mΩ standard level MOSFET
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; Tmb = 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
I
D
= 10 A; V
DS
= 48 V; V
GS
= 20 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package
[1]
Min
-
-
-
Typ
-
-
-
Max
60
30
53
Unit
V
A
W
Static characteristics FET1 and FET2
drain-source on-state
resistance
-
11.3
14
Dynamic characteristics FET1 and FET2
Q
GD
gate-drain charge
-
8.1
-
nC
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