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BLS7G2729L-350P_15

Description
LDMOS S-band radar power transistor
File Size169KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BLS7G2729L-350P_15 Overview

LDMOS S-band radar power transistor

BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 5 — 16 May 2014
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 2.9 GHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 200 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
(GHz)
2.7 to 2.9
V
DS
(V)
32
P
L
(W)
350
G
p
(dB)
13
D
(%)
50
t
r
(ns)
8
t
f
(ns)
5
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operation (2.7 GHz to 2.9 GHz)
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz
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