BYV410X-600
Enhanced ultrafast dual rectifier diode
Rev. 01 — 29 June 2009
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast dual rectifier diode in a SOT186A (TO-220AB) plastic package.
1.2 Features and benefits
High thermal cycling performance
Isolated package
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state losses
1.3 Applications
Dual mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1.
I
O(AV)
Quick reference
Conditions
square-wave pulse;
δ
= 0.5;
T
h
≤
42 °C; both diodes
conducting; see
Figure 1;
see
Figure 2
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs;
T
j
= 25 °C; see
Figure 5
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A; T
j
= 25 °C;
see
Figure 4
I
F
= 10 A; T
j
= 150 °C
Min
-
Typ
-
Max
20
Unit
A
average output
current
Symbol Parameter
Dynamic characteristics
t
rr
reverse recovery
time
recovered charge
-
20
35
ns
Q
r
-
15
28
nC
Static characteristics
V
F
forward voltage
-
-
1.4
1.3
2.1
1.9
V
V
NXP Semiconductors
BYV410X-600
Enhanced ultrafast dual rectifier diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
A1
K
A2
n.c.
Description
anode 1
cathode
anode 2
mounting base; isolated
mb
A1
K
sym125
Simplified outline
Graphic symbol
A2
1 2 3
SOT186A
(TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV410X-600
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
T
stg
T
j
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
DC
square-wave pulse;
δ
= 0.5; T
h
≤
42 °C; both diodes
conducting; see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5; t
p
= 25 µs; T
h
≤
60 °C; per
diode
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C; per diode
t
p
= 10 ms; sine-wave pulse; T
j(init)
25 °C; per diode
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
600
600
600
20
20
132
120
150
150
Unit
V
V
V
A
A
A
A
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV410X-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 29 June 2009
2 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafast dual rectifier diode
24
P
tot
(W)
18
0.2
0.5
003aad262
24
P
tot
(W)
003aad263
δ
=1
a = 180°
18
90
60
30
12
120
0.1
12
6
6
0
0
0
5
7
I
F(AV)
(A)
15
0
5
I
F(AV)
(A)
10
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV410X-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 29 June 2009
3 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafast dual rectifier diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
Conditions
with heatsink compound; per diode;
see
Figure 3
with heatsink compound; both diodes
conducting
R
th(j-a)
thermal resistance from
junction to ambient free air
Min
-
-
-
Typ
-
-
55
Max
5
3
-
Unit
K/W
K/W
K/W
10
Z
th(j-h)
(K/W)
1
001aaf033
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 3.
Transient thermal impedance from junction to heatsink per diode as a function of pulse width
6. Isolation characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz < f < 60 Hz; sinusoidal waveform;
relative humidity < 65 %; clean and dust
free; from all terminals to external heatsink
from cathode to external heatsink; f = 1 MHz
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYV410X-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 29 June 2009
4 of 10
NXP Semiconductors
BYV410X-600
Enhanced ultrafast dual rectifier diode
7. Characteristics
Table 7.
Symbol
V
F
I
R
Characteristics
Parameter
forward voltage
reverse current
Conditions
I
F
= 10 A; T
j
= 25 °C; see
Figure 4
I
F
= 10 A; T
j
= 150 °C
V
R
= 600 V; T
j
= 100 °C
V
R
= 600 V; T
j
= 25 °C
Dynamic characteristics
Q
r
t
rr
I
RM
V
FR
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; see
Figure 5
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
see
Figure 5
I
F
= 1 A; dI
F
/dt = 100 A/µs; see
Figure 6
-
-
-
-
15
20
1.4
3.2
28
35
1.9
-
nC
ns
A
V
Min
-
-
-
-
Typ
1.4
1.3
0.7
10
Max
2.1
1.9
1.5
50
Unit
V
V
mA
µA
Static characteristics
12
I
F
(A)
003aad261
I
F
dl
F
dt
t
rr
8
time
(1)
(2)
(3)
25 %
Q
r
100 %
4
I
R
0
0
1
2
V
F
(V)
3
I
RM
003aac562
Fig 5.
Reverse recovery definitions; ramp recovery
Fig 4.
Forward current as a function of forward
voltage
BYV410X-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 29 June 2009
5 of 10
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